Search Results for &quot; IRFS3107PBF &quot;

N-Channel MOSFET, 60V, 120A, 0.003Ω, TO-263AB

SMALL OUTLINE, R-PSSO-G2

Active

Max Operating Temperature: 175

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-263AB

IRFS3004TRLPBF

Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

SMALL OUTLINE, R-PSSO-G2

Active

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-263AB

Number of Elements: 1

MOSFET 75V 1 N-CH HEXFET 5.8mOhms 79nC

Volume Production

Package/Case: D2PAK

Continuous Drain Current (ID): 120A

Drain to Source Breakdown Voltage: 75V

Drain to Source Resistance: 5.8mR

Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3

LEAD FREE, D2PAK-3

Active

Max Operating Temperature: 175

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-263AB

IRFS3207ZTRRPBF

Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3

SMALL OUTLINE, R-PSSO-G2

Active

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-263AB

Number of Elements: 1

IRFS3207ZTRLPBF

Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3

LEAD FREE, D2PAK-3

Transferred

Max Operating Temperature: 175

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-263AB

Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2

D2PAK-3/2

Active

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-263AB

Number of Elements: 1

IRFS240B

Power Field-Effect Transistor, 12.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN

TO-3PF, 3 PIN

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Pin Count: 3

IRFS540A

MOSFET N-CH 100V 17A TO-220F

Obsolete

Package/Case: TO-220-3

Continuous Drain Current (ID): 17A

Drain to Source Breakdown Voltage: 100V

Drain to Source Resistance: 52mR

+15

IRFS740B

Power Field-Effect Transistor, 10A I(D), 400V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN

TO-220F, 3 PIN

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Pin Count: 3

Power Field-Effect Transistor, 5.7A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Pin Count: 3

IRFS830B

500V N-Channel MOSFET

Obsolete

Continuous Drain Current (ID): 4.5A

Drain to Source Breakdown Voltage: 500V

Drain to Source Resistance: 1.16R

Fall Time: 45ns

IRFS250B

Power Field-Effect Transistor, 21.3A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN

TO-3PF, 3 PIN

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Pin Count: 3

IRFS4410

Power Field-Effect Transistor, 96A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

D2PAK-3

Active

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-263AB

Number of Elements: 1

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Obsolete

Package/Case: TO-263-3

Continuous Drain Current (ID): 73A

Current Rating: 73A

Drain to Source Breakdown Voltage: 100V

MOSFET

Obsolete

Continuous Drain Current (ID): 8.1A

Drain to Source Breakdown Voltage: 250V

Drain to Source Resistance: 450mR

Fall Time: 65ns

IRFS254B

Power Field-Effect Transistor, 16A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Pin Count: 3

Samsung

Power Field-Effect Transistor, 5.7A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Pin Count: 3

IRFSL4410

Power Field-Effect Transistor, 96A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

IN-LINE, R-PSIP-T3

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 96A

Current Rating: 96A

Drain to Source Breakdown Voltage: 100V

IRFS9N60A

Vishay(Siliconix)

600V N-Channel MOSFET, 9.2A, 750mR, D2PAK, Surface Mount

SMALL OUTLINE, R-PSSO-G2

Obsolete

Package/Case: D2PAK

Continuous Drain Current (ID): 9.2A

Drain to Source Resistance: 750mR

Drain to Source Voltage (Vdss): 600V

+21

Search Results for "IRFS3107PBF"

Filters

IRFS3206TRRPBF

N-Channel MOSFET, 60V, 120A, 0.003Ω, TO-263AB

SMALL OUTLINE, R-PSSO-G2

Active

Max Operating Temperature: 175

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-263AB

IRFS3004TRLPBF

Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

SMALL OUTLINE, R-PSSO-G2

Active

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-263AB

Number of Elements: 1

MOSFET 75V 1 N-CH HEXFET 5.8mOhms 79nC

Volume Production

Package/Case: D2PAK

Continuous Drain Current (ID): 120A

Drain to Source Breakdown Voltage: 75V

Drain to Source Resistance: 5.8mR

Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3

LEAD FREE, D2PAK-3

Active

Max Operating Temperature: 175

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-263AB

IRFS3207ZTRRPBF

Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3

SMALL OUTLINE, R-PSSO-G2

Active

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-263AB

Number of Elements: 1

IRFS3207ZTRLPBF

Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3

LEAD FREE, D2PAK-3

Transferred

Max Operating Temperature: 175

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-263AB

Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2

D2PAK-3/2

Active

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-263AB

Number of Elements: 1

IRFS240B

Power Field-Effect Transistor, 12.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN

TO-3PF, 3 PIN

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Pin Count: 3

IRFS540A

MOSFET N-CH 100V 17A TO-220F

Obsolete

Package/Case: TO-220-3

Continuous Drain Current (ID): 17A

Drain to Source Breakdown Voltage: 100V

Drain to Source Resistance: 52mR

+15

IRFS740B

Power Field-Effect Transistor, 10A I(D), 400V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN

TO-220F, 3 PIN

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Pin Count: 3

Power Field-Effect Transistor, 5.7A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Pin Count: 3

IRFS830B

500V N-Channel MOSFET

Obsolete

Continuous Drain Current (ID): 4.5A

Drain to Source Breakdown Voltage: 500V

Drain to Source Resistance: 1.16R

Fall Time: 45ns

IRFS250B

Power Field-Effect Transistor, 21.3A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN

TO-3PF, 3 PIN

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Pin Count: 3

IRFS4410

Power Field-Effect Transistor, 96A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

D2PAK-3

Active

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-263AB

Number of Elements: 1

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Obsolete

Package/Case: TO-263-3

Continuous Drain Current (ID): 73A

Current Rating: 73A

Drain to Source Breakdown Voltage: 100V

MOSFET

Obsolete

Continuous Drain Current (ID): 8.1A

Drain to Source Breakdown Voltage: 250V

Drain to Source Resistance: 450mR

Fall Time: 65ns

IRFS254B

Power Field-Effect Transistor, 16A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Pin Count: 3

Samsung

Power Field-Effect Transistor, 5.7A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Pin Count: 3

IRFSL4410

Power Field-Effect Transistor, 96A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

IN-LINE, R-PSIP-T3

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 96A

Current Rating: 96A

Drain to Source Breakdown Voltage: 100V

IRFS9N60A

Vishay(Siliconix)

600V N-Channel MOSFET, 9.2A, 750mR, D2PAK, Surface Mount