Search Results for &quot; IRFSL4010PBF &quot;

MOSFET MOSFT 100V 127A 6mOhm 120nC

Volume Production

Package/Case: TO-262

Continuous Drain Current (ID): 127A

Drain to Source Breakdown Voltage: 100V

Drain to Source Voltage (Vdss): 100V

+18

IRFSL4310ZPBF

Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN

LEAD FREE, TO-262, 3 PIN

Obsolete

Max Operating Temperature: 175

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

IRFSL4410ZPBF

Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN

LEAD FREE, PLASTIC, TO-262, 3 PIN

Transferred

Drain to Source Voltage (Vdss): 100V

Drain-source On Resistance-Max: 9MR

Lead Free: Lead Free

RoHS Compliant: Yes

IRFSL4410ZPBF

Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN

LEAD FREE, PLASTIC, TO-262, 3 PIN

Active

Max Operating Temperature: 175

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

IRFSL3607

Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN

IN-LINE, R-PSIP-T3

Obsolete

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

Number of Elements: 1

IRFSL9N60A

Vishay(Siliconix)

600V N-Channel MOSFET, 9.2A, 750mR, TO-262

IN-LINE, R-PSIP-T3

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 9.2A

Current Rating: 9.2A

Drain to Source Resistance: 750mR

+23

IRFSL31N20D

Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

IN-LINE, R-PSIP-T3

Obsolete

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

Number of Elements: 1

IRFSL7440PBF

MOSFET Transistor, N Channel, 120 A, 40 V, 0.002 ohm, 10 V, 3 V ;RoHS Compliant: Yes

Volume Production

Package/Case: TO-262

Continuous Drain Current (ID): 120A

Drain to Source Voltage (Vdss): 40V

Drain-source On Resistance-Max: 2.5MR

IRFSL5615PBF

Trans MOSFET N-CH 150V 33A 3-Pin(3+Tab) TO-262

Obsolete

Continuous Drain Current (ID): 33A

Fall Time: 13.1ns

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 175°C

IRFSL3006PBF

Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN

IN-LINE, R-PSIP-T3

Active

Max Operating Temperature: 175

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

IRFSL3004PBF

Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN

IN-LINE, R-PSIP-T3

Obsolete

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

Number of Elements: 1

IRFSL3206PBF

N-Channel MOSFET, 60V, 210A, 3mR, TO-262

LEAD FREE, TO-262, 3 PIN

Transferred

Package/Case: TO-262

Continuous Drain Current (ID): 210A

Current Rating: 210A

Drain to Source Breakdown Voltage: 60V

+25

IRFSL5620PBF

Power Field-Effect Transistor, 24A I(D), 200V, 0.0775ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN

IN-LINE, R-PSIP-T3

Obsolete

Package/Case: TO-262

Continuous Drain Current (ID): 24A

Drain to Source Breakdown Voltage: 200V

Drain to Source Resistance: 77.5mR

+17

IRFSL3507PBF

Trans MOSFET N-CH 75V 97A 3-Pin(3+Tab) TO-262

Obsolete

Package/Case: TO-262

Continuous Drain Current (ID): 97A

Current Rating: 97A

Drain to Source Breakdown Voltage: 75V

+15

IRFSL7430PBF

Power Field-Effect Transistor

Transferred

Package/Case: TO-262

Continuous Drain Current (ID): 195A

Drain to Source Voltage (Vdss): 40V

Max Operating Temperature: 175°C

IRFSL3806PBF

Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC PACKAGE-3

LEAD FREE, PLASTIC PACKAGE-3

Obsolete

Max Operating Temperature: 175

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

IRFSL3607PBF

MOSFET, N, TO-262

Volume Production

Package/Case: TO-262

Continuous Drain Current (ID): 80A

Drain to Source Voltage (Vdss): 75V

Drain-source On Resistance-Max: 9MR

+22

IRFSL3004PBF

MOSFET MOSFT 40V 240A 1.7mOhm 160nC

Volume Production

Package/Case: TO-262

Continuous Drain Current (ID): 340A

Drain to Source Breakdown Voltage: 40V

Drain to Source Voltage (Vdss): 40V

+20

IRFSL7440PBF

Power Field-Effect Transistor, 120A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN

IN-LINE, R-PSIP-T3

Active

Max Operating Temperature: 175

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-262AA

IRFSL3306PBF

Power Field-Effect Transistor, 160A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN