Inductor RF Molded Wirewound 0.56uH 20% 25.2MHz 30Q-Factor Ferrite 0.325A 0.75Ohm DCR 1008 T/R

Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package

Silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package