Rectifier Diode, 1 Phase, 2 Element, 208A, 300V V(RRM), Silicon, CASE A 51, SEMIPACK 2, 3 PIN
Power Field-Effect Transistor, 180A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE D 15, SEMITRANS M1, 4 PIN
Diode Module, 1.2Kv, 117A, Semipack 2; Repetitive Reverse Voltage Vrrm Max:1.2Kv; Forward Current If(Av):117A; Forward Voltage Vf Max:2.2V; Diode Module Configuration:1 Pair Common Cathode; Product Range:-; Forward Current If:117A Rohs Compliant: Yes
Trans IGBT Module N-CH 1200V 79A 7-Pin
Trans IGBT Module N-CH 1200V 114A 7-Pin
Rectifier Diode, 1 Phase, 2 Element, 105A, 1200V V(RRM), Silicon, TO-240AA, CASE A 33, SEMIPACK 1, 3 PIN
Insulated Gate Bipolar Transistor, 110A I(C), 1200V V(BR)CES, N-Channel, CASE D61, SEMITRANS 2, 7 PIN
Insulated Gate Bipolar Transistor, 75A I(C), 1000V V(BR)CES, N-Channel,
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel,
Transistor,
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, CASE D61, SEMITRANS 2, 7 PIN
Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, CASE D61, SEMITRANS 2, 7 PIN
Trans IGBT Module N-CH 1200V 311A 7-Pin
Trans IGBT Module N-CH 1200V 159A 7-Pin
Trans IGBT Module N-CH 1200V 443A 4-Pin
Trans IGBT Module N-CH 1200V 443A 7-Pin
Insulated Gate Bipolar Transistor, 75A I(C), 1700V V(BR)CES, N-Channel, CASE D 61, SEMITRANS 2, 7 PIN
Trans IGBT Module N-CH 1200V 231A 7-Pin
SEMIKRON SKM50GB123D IGBT Array & Module Transistor, N Channel, 50 A, 2.8 V, 400 W, 1.2 kV, SEMITRANS 2
Insulated Gate Bipolar Transistor, 80A I(C), 1700V V(BR)CES, N-Channel, CASE D 61, SEMITRANS 2, 7 PIN
