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IGBT, MODULE, 1.2KV, 310A; Transistor Polarity:Dual NPN; DC Collector Current:310A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:16; Packaging:Each ;RoHS Compliant: Yes

IGBT, MODULE, 1.2KV, 800A

WEIDMULLER SAIS-M23-19P-AN-5.0M Sensor Connector, Electrical Drives, Servo-Motors, Sensors & Actuators

Battery; Non-Rechargeable; Coin/Button; Lithium; 3VDC; 550mAh; Thru-Hole; Computer

IGBT, MODULE, 1.2KV, 596A

IGBT, MODULE, 1.2KV, 323A

IGBT, MODULE, 1.2KV, 673A

WEIDMULLER SAIS-M23-12P-AN-5.0M Sensor Connector, Electrical Drives, Servo-Motors, Sensors & Actuators

IGBT, MODULE, 1.2KV, 448A

IGBT, MODULE, 1.2KV, 159A; Transistor Polarity:Six NPN; DC Collector Current:159A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:20; Packaging:Each ;RoHS Compliant: Yes

IGBT Module, SPT, Half-Bridge, 1200 V, 680 A Max., SEMiX 4s

SEMIKRON SEMIX 202GB066HD IGBT Array & Module Transistor, N Channel, 270 A, 1.9 V, 45 W, 600 V, SEMiX 2

IGBT HALFBRIDGE ULTRAFAST, 1200V, SEMITRANS

Insulated Gate Bipolar Transistor, 430A I(C), 1700V V(BR)CES, N-Channel, CASE SEMIX 3, 11 PIN

IGBT POWER MODULE; Transistor Polarity:N Channel; DC Collector Current:377A; Collector Emitter Saturation Voltage Vce(on):2.35V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.15V; No. of Pins:16; Current, Ifs max:2000A;RoHS Compliant: Yes

Insulated Gate Bipolar Transistor, 260A I(C), 1700V V(BR)CES, N-Channel, CASE SEMIX 2, 11 PIN

Trans IGBT Module N-CH 1200V 418A 29-Pin

Trans IGBT Module N-CH 1200V 533A 29-Pin

Trans IGBT Module N-CH 1200V 533A 18-Pin

IGBT MODULE, 1.2KV, 240A, SEMIX 2; Transistor Polarity:N Channel; DC Collector Current:250A; Collector Emitter Saturation Voltage Vce(on):2.15V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:16 ;RoHS Compliant: Yes