Search Results for "2N3802"

NPN BJT Transistor 400V 2.5A TO-3 Metal Through Hole

NPN BJT Transistor 400V 2.5A TO-3 Through Hole

NPN BJT 400V 2.5A TO-3 Power Transistor

500V 11A TO-39 Through Hole Power MOSFET

TRANSISTOR,PNP,3.5A,400V,TO3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:325V; Power Dissipation Pd:100W; DC Collector Current:3.5A; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:TO-3; No. of Pins:2; DC Current Gain hFE:30; Gain Bandwidth ft Typ:2.8MHz

Small Signal Field-Effect Transistor

JFET P-CH 20V 0.35W TO92

6-Pin CLLCC-2 Non-Lead-Frame SMT BJT

6-Pin CLLCC-2 Non-Lead-Frame SMT BJT

6-Pin CLLCC-2 Non-Lead-Frame SMT BJT

Small Signal Field-Effect Transistor, 2.5A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-92, TO-92, 3 PIN

Power Field-Effect Transistor, 2.5A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN

Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

Small Signal Field-Effect Transistor, 20V, 1-Element, P-Channel, Silicon, Junction FET, TO-92,

Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6

Power Bipolar Transistor,

Power Bipolar Transistor, 3.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin

Power Bipolar Transistor, 2.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN

Power Bipolar Transistor, 2.5A I(C), NPN