Silicon Controlled Rectifier, 1.6A I(T)RMS, 275mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-18,
Medium Power PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 70V; IC (A): 7A; HFE Min: 30; HFE Max: 150; VCE (V): 4V; IC (mA): 2000mA; VCE(SAT) (V): 3.5V; IC (mA)1: 7000mA; IB (mA): 3000mA; FT Min (MHz): 10 MHz; PTM Max (W): 2W; Package: TO-220AB; package_code: TO-220AB; mfr_package_code: TO-220AB
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN