RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4
RF MOSFET 104V 19A 860MHz N-CH
RF Power LDMOS Transistor, 0.47 to 0.86 GHz, 350 W, 20 dB, 50 V
N-Channel MOSFET, 104V, 19A, 860MHz, Surface Mount
RF FET, 2-Element, N-Channel, 4-Terminal, Ceramic
