Search Results for &quot; FDN5618P &quot;

60V P-Channel MOSFET, 1.25A, 170mR, SMT

SMALL OUTLINE, R-PDSO-G3

Active

Package/Case: TO-236-3

Continuous Drain Current (ID): 1.25A

Current Rating: -1.25A

Drain to Source Breakdown Voltage: -60V

Rochester Electronics

MOSFET P-CH 60V 1.25A SSOT3

Volume Production

Package/Case: SOT-23

Continuous Drain Current (ID): 1.2A

Current Rating: -1.25A

Drain to Source Breakdown Voltage: -200V

Fairchild

Power Field-Effect Transistor, 1.25A I(D), 60V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3

SMALL OUTLINE, R-PDSO-G3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: DUAL

Pin Count: 3

FDN5618P_NL

FDN5618P_NL

Volume Production

Continuous Drain Current (ID): 1.25A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

FDN5618P_SB4N007

Volume Production

Power Field-Effect Transistor, 1.25A I(D), 60V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3

SMALL OUTLINE, R-PDSO-G3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: DUAL

Pin Count: 3

FDN5618P/BKN

Trans MOSFET P-CH 60V 1.25A 3-Pin SuperSOT T/R

Unknown

Search Results for "FDN5618P"

Filters

60V P-Channel MOSFET, 1.25A, 170mR, SMT

SMALL OUTLINE, R-PDSO-G3

Active

Package/Case: TO-236-3

Continuous Drain Current (ID): 1.25A

Current Rating: -1.25A

Drain to Source Breakdown Voltage: -60V

Rochester Electronics

MOSFET P-CH 60V 1.25A SSOT3

Volume Production

Package/Case: SOT-23

Continuous Drain Current (ID): 1.2A

Current Rating: -1.25A

Drain to Source Breakdown Voltage: -200V

Fairchild

Power Field-Effect Transistor, 1.25A I(D), 60V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3

SMALL OUTLINE, R-PDSO-G3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: DUAL

Pin Count: 3

FDN5618P_NL

FDN5618P_NL

Volume Production

Continuous Drain Current (ID): 1.25A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

FDN5618P_SB4N007

Volume Production

Power Field-Effect Transistor, 1.25A I(D), 60V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3

SMALL OUTLINE, R-PDSO-G3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: DUAL

Pin Count: 3

FDN5618P/BKN

Trans MOSFET P-CH 60V 1.25A 3-Pin SuperSOT T/R