100V 33A 44mR TO-262 N-Channel MOSFET
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
N-Channel MOSFET, 100V, 33A, 44mR, TO-220AB
N-Channel MOSFET, 100V, 33A, 0.044ohm, TO-220AB
Power Field-Effect Transistor, 36A I(D), 100V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
100V 23A N-Channel MOSFET TO-262 3-Pin
200V 18A HEXFET MOSFET, TO-262, Through Hole, -55°C to 175°C
Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN
Power Field-Effect Transistor
Mosfet, Power; N-ch; Vdss 100V; Rds(on) 44MILLIOHMS; Id 33A; TO-220AB; Pd 130W; -55DEG
