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N-Channel MOSFET, 60V, 13.4A, 0.011 Ohm, 3-Pin

ROHS COMPLIANT, ISOMETRIC-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

International Rectifier

60V 13.4A HEXFET Surface Mount Power MOSFET

Volume Production

Continuous Drain Current (ID): 13.4A

Drain to Source Voltage (Vdss): 60V

Input Capacitance: 1.35nF

Max Operating Temperature: 150°C

International Rectifier

N-CH MOSFET 60V 13.4A 9mR SMD

End of Life

Continuous Drain Current (ID): 13.4A

Drain to Source Breakdown Voltage: 60V

Drain to Source Resistance: 9mR

Drain to Source Voltage (Vdss): 60V

International Rectifier

30Volt 30A Surface Mount N-Channel HEXFET MOSFET

Volume Production

Continuous Drain Current (ID): 30A

Current Rating: 30A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 3mR

N-Channel MOSFET, 100V, 10.3A, 0.013ohm, 3-Pin

CHIP CARRIER, R-XBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Min Operating Temperature: -40

Terminal Position: BOTTOM

International Rectifier

40V 12.7A Surface Mount N-Channel Power MOSFET

Volume Production

Continuous Drain Current (ID): 12.7A

Current Rating: 12.7A

Drain to Source Voltage (Vdss): 40V

Drain-source On Resistance-Max: 8.3MR

International Rectifier

100V 60A N-Channel Power MOSFET

Volume Production

Continuous Drain Current (ID): 60A

Current Rating: 10.3A

Drain to Source Voltage (Vdss): 100V

Drain-source On Resistance-Max: 13MR