Search Results for &quot; NE3210S01 &quot;

N-Channel MOSFET, 4V, 70mA, 12GHz, SMD/SMT

End of Life

Package/Case: SMD/SMT

Continuous Drain Current (ID): 70mA

Drain to Source Breakdown Voltage: 4V

Drain to Source Voltage (Vdss): 4V

NE3210S01

DISK BUTTON, O-XRDB-G4

Obsolete

Number of Terminals: 4

Terminal Position: RADIAL

Number of Elements: 1

N-CHANNEL MOSFET, 4V, 70mA, 12GHz, SMD/SMT

End of Life

Package/Case: SMD/SMT

Continuous Drain Current (ID): 70mA

Drain to Source Breakdown Voltage: 4V

Drain to Source Voltage (Vdss): 4V

NE3210S01-T1B

MICROWAVE, X-PXMW-G4

Obsolete

Case Connection: SOURCE

Drain Current-Max (Abs) (ID): 70mA

Drain Current-Max (ID): 15mA

DS Breakdown Voltage-Min: 3V

NE3210S01-T1

MICROWAVE, X-PXMW-G4

Obsolete

Case Connection: SOURCE

Drain Current-Max (Abs) (ID): 70mA

Drain Current-Max (ID): 15mA

DS Breakdown Voltage-Min: 3V

MOSFET Super Lo Noise HJFET

Obsolete

Package/Case: SO

Continuous Drain Current (ID): 10mA

Drain to Source Breakdown Voltage: 4V

Gate to Source Voltage (Vgs): -3V

70mA 4V Drain to Source Breakdown Voltage RF Transistor SO Package

DISK BUTTON, O-PRDB-G4

Obsolete

Package/Case: SO

Continuous Drain Current (ID): 70mA

Drain to Source Breakdown Voltage: 4V

Gate to Source Voltage (Vgs): 3V

NE3210S01-A

Volume Production

MOSFET Super Lo Noise HJFET

Obsolete

Package/Case: SO

Continuous Drain Current (ID): 10mA

Drain to Source Breakdown Voltage: 4V

Gate to Source Voltage (Vgs): -3V

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, PLASTIC, SO1, 4 PIN

DISK BUTTON, O-PRDB-G4

Obsolete

Number of Terminals: 4

Terminal Position: RADIAL

Pin Count: 4

Number of Elements: 1

NE3210S01-T1B-A

MOSFETs Super Lo Noise HJFET

Obsolete

Continuous Drain Current (ID): 70mA

Gate to Source Voltage (Vgs): 3V

Max Operating Temperature: 125°C

Min Operating Temperature: -65°C

NE3210S01-A

Obsolete

Continuous Drain Current (ID): 70mA

Gate to Source Voltage (Vgs): 3V

Max Operating Temperature: 125°C

Min Operating Temperature: -65°C

Search Results for "NE3210S01"

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N-Channel MOSFET, 4V, 70mA, 12GHz, SMD/SMT

End of Life

Package/Case: SMD/SMT

Continuous Drain Current (ID): 70mA

Drain to Source Breakdown Voltage: 4V

Drain to Source Voltage (Vdss): 4V

NE3210S01

DISK BUTTON, O-XRDB-G4

Obsolete

Number of Terminals: 4

Terminal Position: RADIAL

Number of Elements: 1

N-CHANNEL MOSFET, 4V, 70mA, 12GHz, SMD/SMT

End of Life

Package/Case: SMD/SMT

Continuous Drain Current (ID): 70mA

Drain to Source Breakdown Voltage: 4V

Drain to Source Voltage (Vdss): 4V

NE3210S01-T1B

MICROWAVE, X-PXMW-G4

Obsolete

Case Connection: SOURCE

Drain Current-Max (Abs) (ID): 70mA

Drain Current-Max (ID): 15mA

DS Breakdown Voltage-Min: 3V

NE3210S01-T1

MICROWAVE, X-PXMW-G4

Obsolete

Case Connection: SOURCE

Drain Current-Max (Abs) (ID): 70mA

Drain Current-Max (ID): 15mA

DS Breakdown Voltage-Min: 3V

MOSFET Super Lo Noise HJFET

Obsolete

Package/Case: SO

Continuous Drain Current (ID): 10mA

Drain to Source Breakdown Voltage: 4V

Gate to Source Voltage (Vgs): -3V

70mA 4V Drain to Source Breakdown Voltage RF Transistor SO Package

DISK BUTTON, O-PRDB-G4

Obsolete

Package/Case: SO

Continuous Drain Current (ID): 70mA

Drain to Source Breakdown Voltage: 4V

Gate to Source Voltage (Vgs): 3V

NE3210S01-A

Volume Production

MOSFET Super Lo Noise HJFET

Obsolete

Package/Case: SO

Continuous Drain Current (ID): 10mA

Drain to Source Breakdown Voltage: 4V

Gate to Source Voltage (Vgs): -3V

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, PLASTIC, SO1, 4 PIN

DISK BUTTON, O-PRDB-G4

Obsolete

Number of Terminals: 4

Terminal Position: RADIAL

Pin Count: 4

Number of Elements: 1

NE3210S01-T1B-A

MOSFETs Super Lo Noise HJFET

Obsolete

Continuous Drain Current (ID): 70mA

Gate to Source Voltage (Vgs): 3V

Max Operating Temperature: 125°C

Min Operating Temperature: -65°C

NE3210S01-A