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Search Results for "NE3210S01-T1B"

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N-CHANNEL MOSFET, 4V, 70mA, 12GHz, SMD/SMT

End of Life

Package/Case: SMD/SMT

Continuous Drain Current (ID): 70mA

Drain to Source Breakdown Voltage: 4V

Drain to Source Voltage (Vdss): 4V

NE3210S01-T1B

MICROWAVE, X-PXMW-G4

Obsolete

Case Connection: SOURCE

Drain Current-Max (Abs) (ID): 70mA

Drain Current-Max (ID): 15mA

DS Breakdown Voltage-Min: 3V

California Eastern Laboratories

70mA 4V Drain to Source Breakdown Voltage RF Transistor SO Package

DISK BUTTON, O-PRDB-G4

Obsolete

Package/Case: SO

Continuous Drain Current (ID): 70mA

Drain to Source Breakdown Voltage: 4V

Gate to Source Voltage (Vgs): 3V

NE3210S01-T1B-A

MOSFET Super Lo Noise HJFET

Obsolete

Package/Case: SO

Continuous Drain Current (ID): 10mA

Drain to Source Breakdown Voltage: 4V

Gate to Source Voltage (Vgs): -3V

NE3210S01-T1B-A

California Eastern Laboratories

MOSFETs Super Lo Noise HJFET

Obsolete

Continuous Drain Current (ID): 70mA

Gate to Source Voltage (Vgs): 3V

Max Operating Temperature: 125°C

Min Operating Temperature: -65°C