Search Results for &quot; NE4210S01 &quot;

RF JFET Transistors Super Lo Noise HJFET

End of Life

Package/Case: SMD/SMT

Continuous Drain Current (ID): 70mA

Drain to Source Voltage (Vdss): 4V

Frequency: 12GHz

NE4210S01

Obsolete

Case Connection: SOURCE

Drain Current-Max (ID): 15mA

DS Breakdown Voltage-Min: 3V

FET Technology: HETERO-JUNCTION

Trans JFET 4V 70mA GaAs HJFET 4-Pin Case S01 Bulk

Volume Production

Package/Case: SO

Continuous Drain Current (ID): 70mA

Gate to Source Voltage (Vgs): 3V

Max Operating Temperature: 125°C

RF JFET Transistors Super Lo Noise HJFET

End of Life

Package/Case: SMD/SMT

Continuous Drain Current (ID): 70mA

Drain to Source Breakdown Voltage: 4V

Drain to Source Voltage (Vdss): 4V

N-CHANNEL GaAs FET, 4V Vdss, 70mA ID, 12 GHz f, Tape and Reel

Obsolete

Continuous Drain Current (ID): 70mA

Drain to Source Voltage (Vdss): 4V

Gain: 13dB

Gate to Source Voltage (Vgs): -3V

N-Channel HETERO-JUNCTION RF Transistor, 3V 15mA, KU BAND, MICROWAVEMeter Package

Obsolete

Case Connection: SOURCE

Drain Current-Max (ID): 15mA

DS Breakdown Voltage-Min: 3V

FET Technology: HETERO-JUNCTION

MOSFET Super Lo Noise HJFET

Obsolete

Package/Case: SO

Continuous Drain Current (ID): 10mA

Drain to Source Breakdown Voltage: 4V

Gate to Source Voltage (Vgs): -3V

NE4210S01-T1

NE4210S01-T1

Obsolete

Case Connection: SOURCE

Drain Current-Max (ID): 15mA

DS Breakdown Voltage-Min: 3V

FET Technology: HETERO-JUNCTION

N-Channel HETERO-JUNCTION FET, 3V 15mA 165mW 125°C MICROWAVEMeter Package

Unknown

Case Connection: SOURCE

Drain Current-Max (ID): 15mA

DS Breakdown Voltage-Min: 3V

FET Technology: HETERO-JUNCTION

Trans JFET 4V 70mA 4-Pin Case S01 T/R

Not Recommended for New Design

Package/Case: SO

Continuous Drain Current (ID): 70mA

Drain to Source Breakdown Voltage: 4V

Gate to Source Voltage (Vgs): -3V

KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET

Obsolete

Max Operating Temperature: 125

Number of Terminals: 4

Terminal Position: UNSPECIFIED

Number of Elements: 1

NE4210S01-T1-A

KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET

Transferred

Number of Terminals: 4

Terminal Position: UNSPECIFIED

Number of Elements: 1

Trans JFET 4V 70mA 4-Pin Case S01 T/R

Unknown

Description: Trans JFET 4V 70mA 4-Pin Case S01 T/R

Search Results for "NE4210S01"

Filters

RF JFET Transistors Super Lo Noise HJFET

End of Life

Package/Case: SMD/SMT

Continuous Drain Current (ID): 70mA

Drain to Source Voltage (Vdss): 4V

Frequency: 12GHz

NE4210S01

Obsolete

Case Connection: SOURCE

Drain Current-Max (ID): 15mA

DS Breakdown Voltage-Min: 3V

FET Technology: HETERO-JUNCTION

Trans JFET 4V 70mA GaAs HJFET 4-Pin Case S01 Bulk

Volume Production

Package/Case: SO

Continuous Drain Current (ID): 70mA

Gate to Source Voltage (Vgs): 3V

Max Operating Temperature: 125°C

RF JFET Transistors Super Lo Noise HJFET

End of Life

Package/Case: SMD/SMT

Continuous Drain Current (ID): 70mA

Drain to Source Breakdown Voltage: 4V

Drain to Source Voltage (Vdss): 4V

N-CHANNEL GaAs FET, 4V Vdss, 70mA ID, 12 GHz f, Tape and Reel

Obsolete

Continuous Drain Current (ID): 70mA

Drain to Source Voltage (Vdss): 4V

Gain: 13dB

Gate to Source Voltage (Vgs): -3V

N-Channel HETERO-JUNCTION RF Transistor, 3V 15mA, KU BAND, MICROWAVEMeter Package

Obsolete

Case Connection: SOURCE

Drain Current-Max (ID): 15mA

DS Breakdown Voltage-Min: 3V

FET Technology: HETERO-JUNCTION

MOSFET Super Lo Noise HJFET

Obsolete

Package/Case: SO

Continuous Drain Current (ID): 10mA

Drain to Source Breakdown Voltage: 4V

Gate to Source Voltage (Vgs): -3V

NE4210S01-T1

NE4210S01-T1

Obsolete

Case Connection: SOURCE

Drain Current-Max (ID): 15mA

DS Breakdown Voltage-Min: 3V

FET Technology: HETERO-JUNCTION

N-Channel HETERO-JUNCTION FET, 3V 15mA 165mW 125°C MICROWAVEMeter Package

Unknown

Case Connection: SOURCE

Drain Current-Max (ID): 15mA

DS Breakdown Voltage-Min: 3V

FET Technology: HETERO-JUNCTION

Trans JFET 4V 70mA 4-Pin Case S01 T/R

Not Recommended for New Design

Package/Case: SO

Continuous Drain Current (ID): 70mA

Drain to Source Breakdown Voltage: 4V

Gate to Source Voltage (Vgs): -3V

KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET

Obsolete

Max Operating Temperature: 125

Number of Terminals: 4

Terminal Position: UNSPECIFIED

Number of Elements: 1

NE4210S01-T1-A

KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET

Transferred

Number of Terminals: 4

Terminal Position: UNSPECIFIED

Number of Elements: 1

Trans JFET 4V 70mA 4-Pin Case S01 T/R