IGBT 430V 15A 115W DPAK
Insulated Gate Bipolar Transistor, 15A I(C), 430V V(BR)CES, N-Channel, LEAD FREE, CASE 369C-01, DPAK-3
ON SEMICONDUCTOR NGD18N40ACLBT4G IGBT Single Transistor, 18 A, 1.8 V, 115 W, 400 V, TO-252, 3 Pins
Trans IGBT Chip N-CH 500V 18A 3-Pin(2+Tab) DPAK T/R
N-Channel Ignition IGBT 18 A, 400 V, Improved SCIS energy and Vce(on), DPAK (SINGLE GAUGE) TO-252, 2500-REEL
Insulated Gate Bipolar Transistor, 18A I(C), 500V V(BR)CES, N-Channel, DPAK-3/2
Trans IGBT Chip N-CH 430V 18A 3-Pin(2+Tab) D2PAK T/R
Insulated Gate Bipolar Transistor,