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Search Results for "SIA911DJ-T1-E3"

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Vishay(Siliconix)

P-CHANNEL TrenchFET MOSFET 3.6A 20V 94mR Surface Mount

Obsolete

Continuous Drain Current (ID): 3.6A

Drain to Source Resistance: 94mR

Drain to Source Voltage (Vdss): 20V

Drain-source On Resistance-Max: 94MR

Vishay(Siliconix)

2-Channel N-Channel TrenchFET MOSFET 4.5A 20V 53mR Surface Mount

Obsolete

Continuous Drain Current (ID): 4.5A

Drain to Source Resistance: 53mR

Drain to Source Voltage (Vdss): 20V

FET Type: 2 N-Channel

MOSFET 12V 4.5A 6.5W

Obsolete

Continuous Drain Current (ID): 4.3A

Drain to Source Resistance: 70mR

Drain to Source Voltage (Vdss): -12V

Gate to Source Voltage (Vgs): 8V

Vishay(Siliconix)

N-CHANNEL Power MOSFET, 4.5A, 12V, 1.9W, 2-Channel

Obsolete

Continuous Drain Current (ID): 4.5A

Drain to Source Resistance: 40mR

Drain to Source Voltage (Vdss): 12V

Fall Time: 15ns

Vishay(Siliconix)

P-CHANNEL Power MOSFET, 20V, 4.5A, 6.5W, Tape and Reel

Obsolete

Continuous Drain Current (ID): 4.5A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 110mR

Fall Time: 45ns