Insulated Gate Bipolar Transistor, 420A I(C), 1200V V(BR)CES, N-Channel, CASE D 56, SEMITRANS 3, 7 PIN
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS3-7
Insulated Gate Bipolar Transistor, 310A I(C), 1200V V(BR)CES, N-Channel, CASE D 56, SEMITRANS 3, 7 PIN
Trans IGBT Module N-CH 1200V 443A 7-Pin
Insulated Gate Bipolar Transistor, 370A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS 3, 7 PIN
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, CASE D 56, SEMITRANS 3, 7 PIN
Insulated Gate Bipolar Transistor, 380A I(C), 1200V V(BR)CES, N-Channel, CASE D 56, SEMITRANS 3, 7 PIN
Trans IGBT Module N-CH 1200V 422A 7-Pin Case D-56
Insulated Gate Bipolar Transistor, 422A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS 3, 7 PIN
Insulated Gate Bipolar Transistor, 420A I(C), 1200V V(BR)CES, N-Channel, CASE D59, SEMITRANS 4, 5 PIN
Insulated Gate Bipolar Transistor, 422A I(C), 1200V V(BR)CES
Trans IGBT Module N-CH 1200V 443A 4-Pin
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, CASE D 59, SEMITRANS 4, 4 PIN
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel
Transistor,
Insulated Gate Bipolar Transistor, 370A I(C), 1200V V(BR)CES, N-Channel, CASE D57, SEMITRANS 3, 5 PIN
IGBT MODULE, 600V, 400A, SEMITRANS 3; Transistor Polarity:N Channel; DC Collector Current:400A; Collector Emitter Saturation Voltage Vce(on):600V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:600V; No. of Pins:5 ;RoHS Compliant: Yes
IGBT Module; DC Collector Current:400A; Collector Emitter Saturation Voltage Vce(on):600V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:900mV; No. of Pins:18; Operating Temperature Max:175 C; Packaging:Each ;RoHS Compliant: Yes
Trans IGBT Module N-CH 1200V 422A 5-Pin Case D-56
Insulated Gate Bipolar Transistor, 422A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS-7
