BIPOLAR NPN DEVICE IN A HERMETICALLY SEALED TO39 METAL PACKAGE
BIPOLAR PNP DEVICE IN A HERMETICALLY SEALED TO39 METAL PACKAGE
1000mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR, MO-041BA, HERMETIC SEALED, CERAMIC, LCC-4
Trans GP BJT PNP 300V 1A 750mW 4-Pin UA T/R
PNP BJT 300V 1A Si SMT Ceramic 4-Pin
PNP BJT 300V 1A SMT Ceramic 4-Pin CLLCC-3
PNP BJT 300V 1A SMT Ceramic 4-Pin
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92, PLASTIC PACKAGE-3
RF JFET Transistor, N-Channel, 400MHz, 25V, TO-92
Transistor
N-CH RF JFET, 400MHz, 25V Vdss, 20mA ID, TO-92
RF JFET N-CH 400MHz TO-92 15V 5mA 350mW
JFET N-CH 25V 625MW TO92
Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN
Unijunction Transistor, 0.4uA I(P), TO-18, TO-18, 3 PIN
Small Signal Field-Effect Transistor,
TRIAC, 400V V(DRM), 20A I(T)RMS
