RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, 1.05 X 0.55MM, 0.25MM HEIGHT, SUBMINIATURE, LEADLESS PACKAGE-3
Wide Band Low Power Amplifier, 500MHz Min, 6000MHz Max, 1 Func, GAAS, 1 X 0.50 MM, 0.25 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, MINIATURE, WLP 0402, 3 PIN
Wide Band Low Power Amplifier, 500MHz Min, 6000MHz Max, 1 Func, GAAS, 1 X 0.50 MM, 0.25 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, MINIATURE, WLP 0402, 3 PIN