Search Results for "APT1004R2AN"

Power Field-Effect Transistor, 9A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3, 2 PIN

Power Field-Effect Transistor, 19A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4

Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

MOSFET N-CH 1000V 19A SOT-227

Diode Rectifier Bridge Single 600V 100A 4-Pin SOT-227 Tube

Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, TO-247, ROHS COMPLIANT PACKAGE-2

Power Field-Effect Transistor, 8.4A I(D), 1000V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, TO-258, 3 PIN

1000V 4A N-CH Power MOSFET, D3PAK, TO-268

Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, ISOTOP-4

Rectifier Diode, Schottky, 1 Phase, 2 Element, 120A, 200V V(RRM), Silicon, TO-264AA, TO-264, 3 PIN

Insulated Gate Bipolar Transistor, 123A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, ISOTOP-4

Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, ISOTOP-4

Trans MOSFET N-CH 1KV 33A 3-Pin(3+Tab) TO-264 MAX

Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, ISOTOP-4

Insulated Gate Bipolar Transistor, 140A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, ISOTOP-4

Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3

Insulated Gate Bipolar Transistor, 148A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, ISOTOP-4

Insulated Gate Bipolar Transistor, 165A I(C), 650V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 245A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-3

Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET