Search Results for "APT10050B2VR"

Insulated Gate Bipolar Transistor, 123A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, ISOTOP-4

Power Field-Effect Transistor, 25A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3

Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, ISOTOP-4

Trans MOSFET N-CH 1KV 25A 3-Pin(3+Tab) T-MAX

Trans MOSFET N-CH 1KV 33A 3-Pin(3+Tab) TO-264 MAX

Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, ISOTOP-4

Insulated Gate Bipolar Transistor, 140A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, ISOTOP-4

Trans MOSFET N-CH 1KV 25A 3-Pin(3+Tab) T-MAX

Insulated Gate Bipolar Transistor, 148A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, ISOTOP-4

MOSFET N-CH 1000V 23A T-MAX

Insulated Gate Bipolar Transistor, 229A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN

Insulated Gate Bipolar Transistor, 245A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-3

Insulated Gate Bipolar Transistor, 153A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, ISOTOP-4

Insulated Gate Bipolar Transistor, 229A I(C), 600V V(BR)CES, N-Channel, TO-264AA, ROHS COMPLIANT, TO-264, 3 PIN

Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 100A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

Diode Rectifier Bridge Single 600V 10A 4-Pin SOT-227

Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4

DIODE SCHOTTKY 1.2KV 36A TO247

Power Field-Effect Transistor, 100A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN