Power Field-Effect Transistor, 8A I(D), 1200V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN