Power Field-Effect Transistor, 25A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3
Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, ISOTOP-4
Single Color LED, Super Bright Red, Diffused White, 1.2mm, 1.60 X 0.80 MM, 0.75 MM HEIGHT, SMD, 2 PIN
Insulated Gate Bipolar Transistor, 56A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN