Power Field-Effect Transistor, 100A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Power Field-Effect Transistor, 4A I(D), 1000V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Power Field-Effect Transistor, 21A I(D), 1000V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
Insulated Gate Bipolar Transistor, 43A I(C), 900V V(BR)CES, N-Channel, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
Rectifier Diode, 1 Phase, 2 Element, 15A, 400V V(RRM), Silicon, TO-247AC, TO-247, 3 PIN
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 15A, 1000V V(RRM), Silicon, TO-247, TO-247, 2 PIN