Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Insulated Gate Bipolar Transistor, 625A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
Insulated Gate Bipolar Transistor, 400A I(C), 1700V V(BR)CES, N-Channel,
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Power Field-Effect Transistor, 120A I(D), 1200V, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, MODULE-10/8
Power Field-Effect Transistor, 180A I(D), 1200V, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, MODULE-10/8
Insulated Gate Bipolar Transistor, 370A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,
Small Signal Field-Effect Transistor,
IGBT Modules 1200V 200A GAL CH
IGBT Transistors 1200V 300A DUAL
IGBT Modules 1200V 100A CHOPPER
Insulated Gate Bipolar Transistor, 430A I(C), 1200V V(BR)CES, N-Channel, SSW SENSE 1, 4 PIN
Power Field-Effect Transistor,
IGBT Transistors 1200V 150A DUAL
Insulated Gate Bipolar Transistor, 550A I(C), 1200V V(BR)CES, MODULE-5
IGBT Modules 1200V 150A CHOPPER
2-Element MOSFET, 11-Terminal Upper
