Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, MODULE-23
Fixed Inductors 215nH 50A SMT
Trans IGBT Module N-CH 1200V 100A 515000mW 35-Pin ECONO3-3 Tray
Inductor Power Shielded Wirewound 0.18uH/0.13uH 10% 100KHz Ferrite 72A 0.00012Ohm DCR
Inductor Power Wirewound 0.22uH/0.158uH 10% 100KHz Ferrite 74A 0.00018Ohm DCR T/R
High frequency, high current power inductors
PANASONIC ELECTRONIC COMPONENTS EEE-HA1H2R2AR ALUMINUM ELECTROLYTIC CAPACITOR, 2.2UF, 50V, 20%, SMD
Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, MODULE-21
Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, MODULE-21
LED Uni-Color Yellow Green 575nm 2-Pin SMD T/R
100uF 35V 20% Aluminum Electrolytic Capacitor SMD
220uF 25V 20% Aluminum Electrolytic Capacitor SMD
330uF 10V 20% Aluminum Electrolytic Capacitor SMD
47uF 50V 20% Radial Aluminum Electrolytic Capacitor SMD
1000µF 10V 20% Radial Alum Elec Cap, 85°C, 580mA Ripple, SMD
220uF 16V 20% Aluminum Electrolytic Capacitor SMD
10uF 100V 20% Radial Alum Elec Cap, 8x10.2mm, 85mA Ripple
16V 470uF 20% Aluminum Electrolytic Capacitor SMD
470uF 25V 20% SMD Aluminum Electrolytic Capacitor