RF Choke Wirewound 10uH 10% 2.52MHz 70Q-Factor Ferrite 500mA 580mOhm DCR AXL T/R
Power Field-Effect Transistor, 62A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3
Power Field-Effect Transistor, 75A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
Power Field-Effect Transistor, 21A I(D), 150V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN

Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
Power Field-Effect Transistor, 75A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
RF Choke Wirewound 330uH 10% 796KHz 65Q-Factor Ferrite 137mA 6.4Ohm DCR AXL T/R
RF Choke Wirewound 27uH 10% 2.52MHz 55Q-Factor Ferrite 390mA 940mOhm DCR AXL T/R
RF Choke Wirewound 22uH 10% 2.52MHz 40Q-Factor Ferrite 410mA 840mOhm DCR AXL T/R
RF Choke Wirewound 560uH 10% 796KHz 60Q-Factor Ferrite 120mA 8.5Ohm DCR AXL T/R