Search Results for &quot; IRF640NLPBF &quot;

International Rectifier IRF6648 N-channel MOSFET Transistor, 86 A, 60 V, 7-pin DirectFET MN

Obsolete

Continuous Drain Current (ID): 86A

Drain to Source Breakdown Voltage: 60V

Drain to Source Voltage (Vdss): 60V

Drain-source On Resistance-Max: 7MR

+17

IRF6668

International Rectifier IRF6668 N-channel MOSFET Transistor, 55 A, 80 V, 7-pin DirectFET MZ

Volume Production

Continuous Drain Current (ID): 55A

Fall Time: 23ns

Gate to Source Voltage (Vgs): 20V

Height: 0.6mm

IRF6621

Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Obsolete

Continuous Drain Current (ID): 12A

Current Rating: 12A

Fall Time: 4.1ns

Gate to Source Voltage (Vgs): 20V

+10

IRF6100

Small Signal Field-Effect Transistor, 5.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, FLIPFET, ISOMETRIC-4

GRID ARRAY, S-PBGA-B4

Obsolete

Continuous Drain Current (ID): 5.1A

Current Rating: -5.1A

Drain to Source Voltage (Vdss): 20V

Input Capacitance: 1.23nF

IRF6622

Trans MOSFET N-CH 25V 15A 6-Pin Direct-FET SQ T/R

Volume Production

Continuous Drain Current (ID): 15A

Fall Time: 5.6ns

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

IRF610R

Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF6218

Power Field-Effect Transistor, 27A I(D), 150V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

FLANGE MOUNT, R-PSFM-T3

Transferred

Package/Case: TO-220AB

Continuous Drain Current (ID): 27A

Drain to Source Voltage (Vdss): 150V

RoHS Compliant: No

IRF6619

Power Field-Effect Transistor, 30A I(D), 20V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3

ROHS COMPLIANT, ISOMETRIC-3

Obsolete

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6215

Power Field-Effect Transistor, 11A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

FLANGE MOUNT, R-PSFM-T3

Transferred

RoHS Compliant: No

IRF6678

Trans MOSFET N-CH 30V 30A 7-Pin Direct-FET MX

Obsolete

Continuous Drain Current (ID): 30A

Current Rating: 30A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 1.7R

+18

IRF6662

International Rectifier IRF6662 N-channel MOSFET Transistor, 8.3 A, 100 V, 7-pin DirectFET MZ

Volume Production

Continuous Drain Current (ID): 8.3A

Fall Time: 5.9ns

Gate to Source Voltage (Vgs): 20V

Height: 0.6mm

IRF6631

International Rectifier IRF6631 N-channel MOSFET Transistor, 13 A, 30 V, 6-pin DirectFET SQ

Volume Production

Continuous Drain Current (ID): 13A

Fall Time: 4.9ns

Gate to Source Voltage (Vgs): 20V

Height: 0.59mm

IRF6612

Trans MOSFET N-CH 30V 136A 7-Pin Direct-FET MX

Obsolete

Continuous Drain Current (ID): 24A

Drain to Source Breakdown Voltage: 30V

Drain to Source Voltage (Vdss): 30V

Gate to Source Voltage (Vgs): 20V

+11

IRF634A

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF630M

Stmicroelectronics

9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN

ROHS COMPLIANT, TO-220, 3 PIN

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF630A

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

TO-220, 3 PIN

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF630B

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF621R

Power Field-Effect Transistor, 5A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF6623

Power Field-Effect Transistor, 16A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6665

Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

Search Results for "IRF640NLPBF"

Filters

IRF6648

International Rectifier IRF6648 N-channel MOSFET Transistor, 86 A, 60 V, 7-pin DirectFET MN

Obsolete

Continuous Drain Current (ID): 86A

Drain to Source Breakdown Voltage: 60V

Drain to Source Voltage (Vdss): 60V

Drain-source On Resistance-Max: 7MR

+17

IRF6668

International Rectifier IRF6668 N-channel MOSFET Transistor, 55 A, 80 V, 7-pin DirectFET MZ

Volume Production

Continuous Drain Current (ID): 55A

Fall Time: 23ns

Gate to Source Voltage (Vgs): 20V

Height: 0.6mm

IRF6621

Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Obsolete

Continuous Drain Current (ID): 12A

Current Rating: 12A

Fall Time: 4.1ns

Gate to Source Voltage (Vgs): 20V

+10

IRF6100

Small Signal Field-Effect Transistor, 5.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, FLIPFET, ISOMETRIC-4

GRID ARRAY, S-PBGA-B4

Obsolete

Continuous Drain Current (ID): 5.1A

Current Rating: -5.1A

Drain to Source Voltage (Vdss): 20V

Input Capacitance: 1.23nF

IRF6622

Trans MOSFET N-CH 25V 15A 6-Pin Direct-FET SQ T/R

Volume Production

Continuous Drain Current (ID): 15A

Fall Time: 5.6ns

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

IRF610R

Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF6218

Power Field-Effect Transistor, 27A I(D), 150V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

FLANGE MOUNT, R-PSFM-T3

Transferred

Package/Case: TO-220AB

Continuous Drain Current (ID): 27A

Drain to Source Voltage (Vdss): 150V

RoHS Compliant: No

IRF6619

Power Field-Effect Transistor, 30A I(D), 20V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3

ROHS COMPLIANT, ISOMETRIC-3

Obsolete

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6215

Power Field-Effect Transistor, 11A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

FLANGE MOUNT, R-PSFM-T3

Transferred

RoHS Compliant: No

IRF6678

Trans MOSFET N-CH 30V 30A 7-Pin Direct-FET MX

Obsolete

Continuous Drain Current (ID): 30A

Current Rating: 30A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 1.7R

+18

IRF6662

International Rectifier IRF6662 N-channel MOSFET Transistor, 8.3 A, 100 V, 7-pin DirectFET MZ

Volume Production

Continuous Drain Current (ID): 8.3A

Fall Time: 5.9ns

Gate to Source Voltage (Vgs): 20V

Height: 0.6mm

IRF6631

International Rectifier IRF6631 N-channel MOSFET Transistor, 13 A, 30 V, 6-pin DirectFET SQ

Volume Production

Continuous Drain Current (ID): 13A

Fall Time: 4.9ns

Gate to Source Voltage (Vgs): 20V

Height: 0.59mm

IRF6612

Trans MOSFET N-CH 30V 136A 7-Pin Direct-FET MX

Obsolete

Continuous Drain Current (ID): 24A

Drain to Source Breakdown Voltage: 30V

Drain to Source Voltage (Vdss): 30V

Gate to Source Voltage (Vgs): 20V

+11

IRF634A

Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF630M

Stmicroelectronics

9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN

ROHS COMPLIANT, TO-220, 3 PIN

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF630A

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

TO-220, 3 PIN

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF630B

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF621R

Power Field-Effect Transistor, 5A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF6623

Power Field-Effect Transistor, 16A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6665

Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3