Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 3.6A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Single N-Channel 150 V 2.5 W 10 nC Hexfet Power Mosfet Surface Mount - SOIC-8

Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
Power Field-Effect Transistor, 3A I(D), 20V, 0.125ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,

Power Field-Effect Transistor, 8.7A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Power Field-Effect Transistor, 5.3A I(D), 20V, 0.062ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
Power Field-Effect Transistor, 1.2A I(D), 200V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
DUAL P CHANNEL MOSFET, -30V, MICRO8; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-1.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):270mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1V ;RoHS Compliant: No