Search Results for &quot; IRF7604TR &quot;

MOSFET MOSFT PCh -20V -3.6A 90mOhm 13nC Micro 8

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): -3.6A

Drain to Source Breakdown Voltage: -20V

Drain to Source Resistance: 90mR

IRF7604PBF

INTERNATIONAL RECTIFIER IRF7604PBF MOSFET, P, MICRO-8

Obsolete

Continuous Drain Current (ID): 3.6A

Drain to Source Voltage (Vdss): 20V

Dual Supply Voltage: -20V

Lead Pitch: 0.65mm

+12

IRF7603

Power Field-Effect Transistor, 5.6A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8

SMALL OUTLINE, R-PDSO-G8

Obsolete

Continuous Drain Current (ID): 5.6A

Drain to Source Voltage (Vdss): 30V

RoHS Compliant: No

IRF7607

Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

SOIC-8

Active

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

MOSFET P-CH 30V 3.6A MICRO8

Obsolete

Continuous Drain Current (ID): 3.6A

Current Rating: -3.6A

Drain to Source Voltage (Vdss): 30V

Input Capacitance: 520pF

+11

IRF7601TR

Power Field-Effect Transistor, 5.7A I(D), 20V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8

MICRO-8

Active

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

Power Field-Effect Transistor, 3.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8

MICRO-8

Active

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

Power Field-Effect Transistor, 3.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8

MICRO-8

Transferred

Package/Case: MSOP

Continuous Drain Current (ID): 3.6A

Current Rating: -3.6A

Drain to Source Voltage (Vdss): 30V

IRF7601TRPBF

Power Field-Effect Transistor, 5.7A I(D), 20V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

SMALL OUTLINE, R-PDSO-G8

Active

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

IRF7603TRPBF

MOSFET N-CH 30V 5.6A 35mR SO Surface Mount

Obsolete

Package/Case: SO

Continuous Drain Current (ID): 5.6A

Current Rating: 5.6A

Drain to Source Breakdown Voltage: 30V

Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8

SMALL OUTLINE, R-PDSO-G8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

Power Field-Effect Transistor, 3.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8

SMALL OUTLINE, S-PDSO-G8

Active

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

MOSFET N-CH 20V 6.5A MICRO8

Volume Production

Package/Case: MSOP

Continuous Drain Current (ID): 6.5A

Drain to Source Voltage (Vdss): 20V

Gate to Source Voltage (Vgs): 12V

IRF7663

MOSFET, P MICRO-8

Obsolete

Continuous Drain Current (ID): 8.2A

Drain to Source Voltage (Vdss): 20V

Lead Pitch: 0.65mm

Max Operating Temperature: 150°C

IRF7663TRPBF

Trans MOSFET P-CH 20V 8.2A 8-Pin Micro T/R

Obsolete

Continuous Drain Current (ID): 8.2A

Current Rating: -8.2A

Drain to Source Breakdown Voltage: -20V

Drain to Source Resistance: 20mR

Power Field-Effect Transistor, 4.1A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2

CHIP CARRIER, R-XBCC-N2

Obsolete

Max Operating Temperature: 175

Number of Terminals: 2

Terminal Position: BOTTOM

Number of Elements: 1

Power Field-Effect Transistor, 4.1A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2

CHIP CARRIER, R-XBCC-N2

Transferred

Continuous Drain Current (ID): 14.4A

Drain to Source Breakdown Voltage: 100V

Drain to Source Voltage (Vdss): 100V

Fall Time: 3.6ns

IRF7665S2TR1PBF

MOSFET MOSFT 100V 14.7A 60mOhm 8.3nC Qg

Obsolete

Continuous Drain Current (ID): 14.4A

Drain to Source Breakdown Voltage: 100V

Drain to Source Resistance: 51mR

Drain to Source Voltage (Vdss): 100V

+24

IRF7304TR

Power Field-Effect Transistor, 3.6A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 4.3A

Drain to Source Voltage (Vdss): 20V

Input Capacitance: 610pF

IRF742

Harris

Power Field-Effect Transistor, 8A I(D), 400V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

Search Results for "IRF7604TR"

Filters

IRF7604TRPBF

MOSFET MOSFT PCh -20V -3.6A 90mOhm 13nC Micro 8

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): -3.6A

Drain to Source Breakdown Voltage: -20V

Drain to Source Resistance: 90mR

IRF7604PBF

INTERNATIONAL RECTIFIER IRF7604PBF MOSFET, P, MICRO-8

Obsolete

Continuous Drain Current (ID): 3.6A

Drain to Source Voltage (Vdss): 20V

Dual Supply Voltage: -20V

Lead Pitch: 0.65mm

+12

IRF7603

Power Field-Effect Transistor, 5.6A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8

SMALL OUTLINE, R-PDSO-G8

Obsolete

Continuous Drain Current (ID): 5.6A

Drain to Source Voltage (Vdss): 30V

RoHS Compliant: No

IRF7607

Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

SOIC-8

Active

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

MOSFET P-CH 30V 3.6A MICRO8

Obsolete

Continuous Drain Current (ID): 3.6A

Current Rating: -3.6A

Drain to Source Voltage (Vdss): 30V

Input Capacitance: 520pF

+11

IRF7601TR

Power Field-Effect Transistor, 5.7A I(D), 20V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8

MICRO-8

Active

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

Power Field-Effect Transistor, 3.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8

MICRO-8

Active

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

Power Field-Effect Transistor, 3.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8

MICRO-8

Transferred

Package/Case: MSOP

Continuous Drain Current (ID): 3.6A

Current Rating: -3.6A

Drain to Source Voltage (Vdss): 30V

IRF7601TRPBF

Power Field-Effect Transistor, 5.7A I(D), 20V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

SMALL OUTLINE, R-PDSO-G8

Active

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

IRF7603TRPBF

MOSFET N-CH 30V 5.6A 35mR SO Surface Mount

Obsolete

Package/Case: SO

Continuous Drain Current (ID): 5.6A

Current Rating: 5.6A

Drain to Source Breakdown Voltage: 30V

Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8

SMALL OUTLINE, R-PDSO-G8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

Power Field-Effect Transistor, 3.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8

SMALL OUTLINE, S-PDSO-G8

Active

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 1

MOSFET N-CH 20V 6.5A MICRO8

Volume Production

Package/Case: MSOP

Continuous Drain Current (ID): 6.5A

Drain to Source Voltage (Vdss): 20V

Gate to Source Voltage (Vgs): 12V

IRF7663

MOSFET, P MICRO-8

Obsolete

Continuous Drain Current (ID): 8.2A

Drain to Source Voltage (Vdss): 20V

Lead Pitch: 0.65mm

Max Operating Temperature: 150°C

IRF7663TRPBF

Trans MOSFET P-CH 20V 8.2A 8-Pin Micro T/R

Obsolete

Continuous Drain Current (ID): 8.2A

Current Rating: -8.2A

Drain to Source Breakdown Voltage: -20V

Drain to Source Resistance: 20mR

Power Field-Effect Transistor, 4.1A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2

CHIP CARRIER, R-XBCC-N2

Obsolete

Max Operating Temperature: 175

Number of Terminals: 2

Terminal Position: BOTTOM

Number of Elements: 1

Power Field-Effect Transistor, 4.1A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2

CHIP CARRIER, R-XBCC-N2

Transferred

Continuous Drain Current (ID): 14.4A

Drain to Source Breakdown Voltage: 100V

Drain to Source Voltage (Vdss): 100V

Fall Time: 3.6ns

IRF7665S2TR1PBF

MOSFET MOSFT 100V 14.7A 60mOhm 8.3nC Qg

Obsolete

Continuous Drain Current (ID): 14.4A

Drain to Source Breakdown Voltage: 100V

Drain to Source Resistance: 51mR

Drain to Source Voltage (Vdss): 100V

+24

IRF7304TR

Power Field-Effect Transistor, 3.6A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Obsolete

Package/Case: SOIC

Continuous Drain Current (ID): 4.3A

Drain to Source Voltage (Vdss): 20V

Input Capacitance: 610pF

IRF742

Harris

Power Field-Effect Transistor, 8A I(D), 400V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB