
Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

Power Field-Effect Transistor, 45A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

International Rectifier IRF510, MOSFET IRF 510 N channel TO 220 5.6A voltage:100V
Power Field-Effect Transistor, 4.4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Power Field-Effect Transistor, 8A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Power Field-Effect Transistor, 4A I(D), 450V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA