Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3

Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
Power Field-Effect Transistor, 140A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO3, 3 PIN

Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
N CHANNEL MOSFET, 30V, 54A TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:54A; Drain Source Voltage Vds:30V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; No. of Pins:3 ;RoHS Compliant: No
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Power Field-Effect Transistor, 75A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN
International Rectifier IRL630PBF, MOSFET IRL 630 N channel TO 220 9A 200V
Mosfet, Power; N-ch; Vdss 20V; Rds(on) 0.03 Ohm; Id 6.5A; MICRO6; Pd 2W; Vgs +/-12V; -55D