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Search Results for "ISC044N15NM6"

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ISC044N15NM6OptiMOS™ 6

150 V N-channel power MOSFET, 4.4 mΩ, SuperSO8 FL

PG-TSON-8-3

active and preferred

Transistor Type: N-channel MOSFET

Drain-Source Voltage (VDS) Max: 150V

Drain Current (ID) Max @25°C: 156A

Pulsed Drain Current (IDpuls) Max: 624A

ISC079N15NM6OptiMOS™ 6

Infineon(OptiMOS™ 6)

150 V N-Channel Power MOSFET, 7.9 mΩ, 95 A, SuperSO8

PG-TDSON-8

Active and preferred

Drain-Source Voltage: 150V

Continuous Drain Current @25°C: 95A

Pulsed Drain Current: 380A

Drain-Source On-Resistance Max @10V: 7.9mΩ

ISC046N13NM6OptiMOS™ 6

Infineon(OptiMOS™)

135 V 142 A N-Channel Power MOSFET in SuperSO8

PG-TDSON-8 (SuperSO8 5x6)

Active and preferred

Transistor polarity: N-channel

Drain-source voltage (VDS) max: 135V

Continuous drain current (ID) at 25°C max: 142A

On-resistance RDS(on) max at 10 V: 4.6mΩ

ISC055N15NM6OptiMOS™ 6

Infineon(OptiMOS™)

150 V N-Channel Power MOSFET, 5.5 mΩ, SuperSO8

TDSON

active and preferred

Drain-Source Voltage: 150V

Continuous Drain Current: 130 @ 25°CA

Pulsed Drain Current: 520A

Power Dissipation: 214W

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