Rectifier Diode, 1 Phase, 1 Element, 12A, 200V V(RRM), Silicon, TO-220AC, TO-220AC, 2 PIN
Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, TO-3P, PIN
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, GF-2, 2 PIN
TRANSFORMER, POWER, 24V, 40VA, PANEL; Turns Ratio:-; Input Current:-; Frequency Min:-; Frequency Max:-; Transformer Mounting:Panel; Product Range:-
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GD-16, 4 PIN