Small Signal Field-Effect Transistor, 0.05A I(D), 20V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-14

NPN Phototransistor, 935nm IR, 30V VCEO, TO-18
Power Choke Shielded Wirewound 3.5uH -20% to 40% 100KHz 7.5A 0.0135Ohm DCR T/R