N-channel MOSFET with 40V drain-source voltage and 50A continuous drain current. Features low 8.8mΩ drain-source on-resistance at 10V gate-source voltage, enabling efficient power handling up to 48.1W. Surface mount TO-252-3 package with fast switching times, including 30ns turn-on delay and 15ns fall time. Operates across a wide temperature range from -55°C to 150°C, RoHS compliant, and designed with TrenchFET® technology.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SUD50N04-8m8P-4GE3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
50A
Drain to Source Resistance
8.8mR
Drain to Source Voltage (Vdss)
40V
Drain-source On Resistance-Max
8.8mR
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
2.4nF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
48.1W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
8.8mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1.5V
Turn-Off Delay Time
45ns
Turn-On Delay Time
30ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUD50N04-8m8P-4GE3 Datasheet
Download the complete datasheet for Vishay SUD50N04-8m8P-4GE3 to view detailed technical specifications.
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