Search Results for &quot; FDMS3668S &quot;

30V 18A N-CH Power Stage MOSFET, 5.2mR RdsOn, SMT

QFN-8

Active

Continuous Drain Current (ID): 18A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 5.2mR

Drain to Source Voltage (Vdss): 30V

Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8

ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8

Transferred

Max Operating Temperature: 150

Number of Terminals: 6

Terminal Position: DUAL

JEDEC Package Code: MO-240AA

FDMS3660S

Dual N-Ch MOSFET 30V 60A 1.8mR Surface Mount

QFN-8

Active

Continuous Drain Current (ID): 60A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 1.8mR

Drain to Source Voltage (Vdss): 30V

FDMS3664S

Dual N-Ch MOSFET 30V 25A 3.2mR Surface Mount

QFN-8

Active

Continuous Drain Current (ID): 25A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 3.2mR

Drain to Source Voltage (Vdss): 30V

Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V, 3000-REEL

QFN-8

Active

Continuous Drain Current (ID): 60A

Drain to Source Resistance: 10mR

Drain to Source Voltage (Vdss): 30V

Fall Time: 3ns

FDMS3660S_F121

N-Channel MOSFET 30V 30A 1.8mR 20V 8mR 40ns 150°C

Volume Production

Continuous Drain Current (ID): 30A

Drain to Source Resistance: 1.8mR

Drain to Source Voltage (Vdss): 30V

Fall Time: 3.96ns

FDMS3686S

Dual N-Ch MOSFET 30V 23A 8mR Surface Mount

QFN-8

End Of Life

Continuous Drain Current (ID): 23A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 8mR

Drain to Source Voltage (Vdss): 30V

Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8

ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8

Transferred

Max Operating Temperature: 150

Number of Terminals: 6

Terminal Position: DUAL

JEDEC Package Code: MO-240AA

Search Results for "FDMS3668S"

Filters

30V 18A N-CH Power Stage MOSFET, 5.2mR RdsOn, SMT

QFN-8

Active

Continuous Drain Current (ID): 18A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 5.2mR

Drain to Source Voltage (Vdss): 30V

Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8

ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8

Transferred

Max Operating Temperature: 150

Number of Terminals: 6

Terminal Position: DUAL

JEDEC Package Code: MO-240AA

FDMS3660S

Dual N-Ch MOSFET 30V 60A 1.8mR Surface Mount

QFN-8

Active

Continuous Drain Current (ID): 60A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 1.8mR

Drain to Source Voltage (Vdss): 30V

FDMS3664S

Dual N-Ch MOSFET 30V 25A 3.2mR Surface Mount

QFN-8

Active

Continuous Drain Current (ID): 25A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 3.2mR

Drain to Source Voltage (Vdss): 30V

Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V, 3000-REEL

QFN-8

Active

Continuous Drain Current (ID): 60A

Drain to Source Resistance: 10mR

Drain to Source Voltage (Vdss): 30V

Fall Time: 3ns

FDMS3660S_F121

N-Channel MOSFET 30V 30A 1.8mR 20V 8mR 40ns 150°C

Volume Production

Continuous Drain Current (ID): 30A

Drain to Source Resistance: 1.8mR

Drain to Source Voltage (Vdss): 30V

Fall Time: 3.96ns

FDMS3686S

Dual N-Ch MOSFET 30V 23A 8mR Surface Mount

QFN-8

End Of Life

Continuous Drain Current (ID): 23A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 8mR

Drain to Source Voltage (Vdss): 30V

Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8