Search Results for &quot; IR7501 &quot;

N-Channel MOSFET 20V 2.4A 135mR 1.25W MSOP

Volume Production

Package/Case: MSOP

Continuous Drain Current (ID): 2.4A

Drain to Source Voltage (Vdss): 20V

Drain-source On Resistance-Max: 135mR

INTERNATIONAL RECTIFIER IRF7501 Dual MOSFET, Dual N Channel, 2.4 A, 30 V, 135 mohm, 2.7 V

Not Recommended for New Design

Continuous Drain Current (ID): 2.4A

Drain to Source Voltage (Vdss): 30V

Gate to Source Voltage (Vgs): 12V

Height: 0.86mm

Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8

SMALL OUTLINE, S-PDSO-G8

Active

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 2

Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8

MICRO-8

Active

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 2

MOSFET N-Channel 30V 2.4A 1.25W SMD/SMT

Not Recommended for New Design

Continuous Drain Current (ID): 2.4A

Drain to Source Voltage (Vdss): 30V

Lead Pitch: 0.65mm

Max Operating Temperature: 150°C

Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-8

LEAD FREE, MICRO-8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 2

Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8

MICRO-8

Active

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 2

20V Dual N-Channel HEXFET Power MOSFET in a Micro 8 package

Unknown

Continuous Drain Current (ID): 2.4A

Drain to Source Voltage (Vdss): 20V

FET Type: 2 N-Channel

Input Capacitance: 260pF

Account

Search Results for "IR7501"

Filters

N-Channel MOSFET 20V 2.4A 135mR 1.25W MSOP

Volume Production

Package/Case: MSOP

Continuous Drain Current (ID): 2.4A

Drain to Source Voltage (Vdss): 20V

Drain-source On Resistance-Max: 135mR

INTERNATIONAL RECTIFIER IRF7501 Dual MOSFET, Dual N Channel, 2.4 A, 30 V, 135 mohm, 2.7 V

Not Recommended for New Design

Continuous Drain Current (ID): 2.4A

Drain to Source Voltage (Vdss): 30V

Gate to Source Voltage (Vgs): 12V

Height: 0.86mm

Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8

SMALL OUTLINE, S-PDSO-G8

Active

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 2

Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8

MICRO-8

Active

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 2

MOSFET N-Channel 30V 2.4A 1.25W SMD/SMT

Not Recommended for New Design

Continuous Drain Current (ID): 2.4A

Drain to Source Voltage (Vdss): 30V

Lead Pitch: 0.65mm

Max Operating Temperature: 150°C

Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-8

LEAD FREE, MICRO-8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 2

Power Field-Effect Transistor, 2.4A I(D), 20V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8

MICRO-8

Active

Number of Terminals: 8

Terminal Position: DUAL

Number of Elements: 2

20V Dual N-Channel HEXFET Power MOSFET in a Micro 8 package