Power Field-Effect Transistor, 44A I(D), 60V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

Power Field-Effect Transistor, 45A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
Power Field-Effect Transistor, 44A I(D), 60V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
RF Choke Wirewound 10uH 10% 7.9MHz 85Q-Factor Ferrite 500mA 580mOhm DCR AXL T/R
RF Choke Wirewound 47uH 10% 2.5MHz 60Q-Factor Ferrite 205mA 2.3Ohm DCR AXL T/R
RF Choke Wirewound 5.6uH 10% 7.9MHz 70Q-Factor Ferrite 590mA 430mOhm DCR AXL Bulk
RF Choke Wirewound 18uH 10% 2.5MHz 65Q-Factor Ferrite 430mA 770mOhm DCR AXL Bulk
RF Choke Wirewound 330uH 10% 790KHz 70Q-Factor Ferrite 137mA 6.4Ohm DCR AXL Bulk
RF Choke Wirewound 100uH 10% 2.5MHz 60Q-Factor Ferrite 165mA 3.5Ohm DCR AXL Bulk
RF Choke Wirewound 4.7uH 10% 7.9MHz 70Q-Factor Ferrite 620mA 390mOhm DCR AXL T/R