Power Field-Effect Transistor, 44A I(D), 60V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

Power Field-Effect Transistor, 45A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
Power Field-Effect Transistor, 44A I(D), 60V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
RF Choke Wirewound 120uH 10% 790KHz 60Q-Factor Ferrite 160mA 3.8Ohm DCR AXL Bulk
RF Choke Wirewound 33uH 10% 2.5MHz 55Q-Factor Ferrite 370mA 1.03Ohm DCR AXL Bulk
RF Choke Wirewound 220uH 10% 790KHz 70Q-Factor Ferrite 155mA 5.1Ohm DCR AXL Bulk
RF Choke Wirewound 68uH 5% 2.5MHz 60Q-Factor Ferrite 185mA 2.9Ohm DCR AXL Bulk
RF Choke Wirewound 4.7uH 10% 7.9MHz 50Q-Factor Ferrite 530mA 350mOhm DCR AXL Bulk
RF Choke Wirewound 1uH 10% 25MHz 55Q-Factor Ferrite 920mA 190mOhm DCR AXL T/R
RF Choke Wirewound 10uH 10% 7.9MHz 85Q-Factor Ferrite 500mA 580mOhm DCR AXL T/R
RF Choke Wirewound 6.8uH 10% 7.9MHz 75Q-Factor Ferrite 550mA 480mOhm DCR AXL T/R
RF Choke Wirewound 2.2uH 10% 7.9MHz 55Q-Factor Ferrite 750mA 280mOhm DCR AXL T/R