Search Results for &quot; IRF6629TRPBF &quot;

INTERNATIONAL RECTIFIER IRF6629TR1PBF MOSFET Transistor, N Channel, 29 A, 25 V, 0.0016 ohm, 10 V, 1.8 V

Obsolete

Continuous Drain Current (ID): 29A

Drain to Source Breakdown Voltage: 25V

Drain to Source Resistance: 2.7mR

Drain to Source Voltage (Vdss): 25V

+25

IRF6623

Power Field-Effect Transistor, 16A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6626

Trans MOSFET N-CH 30V 16A 7-Pin Direct-FET ST

Obsolete

Continuous Drain Current (ID): 72A

Current Rating: 16A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 4mR

IRF6620

Trans MOSFET N-CH 20V 27A 7-Pin Direct-FET MX

Obsolete

Continuous Drain Current (ID): 27A

Current Rating: 27A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 2.1R

+19

IRF6621

Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Obsolete

Continuous Drain Current (ID): 12A

Current Rating: 12A

Fall Time: 4.1ns

Gate to Source Voltage (Vgs): 20V

IRF6622

Trans MOSFET N-CH 25V 15A 6-Pin Direct-FET SQ T/R

Volume Production

Continuous Drain Current (ID): 15A

Fall Time: 5.6ns

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

IRF6626TR1

MOSFET, N, DIRECTFET, ST

Obsolete

Continuous Drain Current (ID): 16A

Drain to Source Breakdown Voltage: 30V

Drain to Source Voltage (Vdss): 30V

Dual Supply Voltage: 30V

+20

Trans MOSFET N-CH 20V 16A 7-Pin Direct-FET ST T/R

Volume Production

Continuous Drain Current (ID): 16A

Current Rating: 16A

Drain to Source Voltage (Vdss): 20V

Drain-source On Resistance-Max: 5.7MR

Power Field-Effect Transistor, 16A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6628TRPBF

Power Field-Effect Transistor, 27A I(D), 25V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2

ROHS COMPLIANT, ISOMETRIC-2

Transferred

Continuous Drain Current (ID): 12A

Current Rating: 12A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 12.1mR

IRF6622TRPBF

Power Field-Effect Transistor, 15A I(D), 25V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3

ROHS COMPLIANT, ISOMETRIC-3

Transferred

Continuous Drain Current (ID): 59A

Current Rating: 15A

Drain to Source Breakdown Voltage: 25V

Drain to Source Resistance: 8.9mR

+14

Power Field-Effect Transistor, 27A I(D), 20V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6621TR1

N-Channel MOSFET, 30V, 12A, 9.1mΩ Rds On, SMT

CHIP CARRIER, R-XBCC-N3

Obsolete

Continuous Drain Current (ID): 12A

Current Rating: 12A

Drain to Source Breakdown Voltage: 30V

Drain to Source Voltage (Vdss): 30V

+23

IRF6626TRPBF

30V N-Channel MOSFET, 16A, 5.4mR Rds(on), DirectFET ST

Obsolete

Continuous Drain Current (ID): 16A

Current Rating: 16A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 7.1mR

+24

Power Field-Effect Transistor, 27A I(D), 20V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3

ROHS COMPLIANT, ISOMETRIC-3

Transferred

Continuous Drain Current (ID): 150A

Current Rating: 27A

Gate to Source Voltage (Vgs): 20V

Height: 0.506mm

+13

IRF6620TR1

INTERNATIONAL RECTIFIER IRF6620TR1 MOSFET, N, DIRECTFET, MX

Obsolete

Continuous Drain Current (ID): 27A

Drain to Source Breakdown Voltage: 20V

Drain to Source Voltage (Vdss): 20V

Dual Supply Voltage: 20V

+22

IRF6623TR1

N-Channel MOSFET, 20V, 16A, 5.7mR Rds On, Surface Mount

CHIP CARRIER, R-XBCC-N3

Obsolete

Continuous Drain Current (ID): 16A

Drain to Source Breakdown Voltage: 20V

Drain to Source Voltage (Vdss): 20V

Dual Supply Voltage: 20V

+21

IRF6622TR1

Trans MOSFET N-CH 25V 15A 6-Pin Direct-FET SQ T/R

Volume Production

Continuous Drain Current (ID): 15A

Fall Time: 5.6ns

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2

CHIP CARRIER, R-XBCC-N2

Obsolete

Number of Terminals: 2

Terminal Position: BOTTOM

Number of Elements: 1

Search Results for "IRF6629TRPBF"

Filters

IRF6629TR1PBF

INTERNATIONAL RECTIFIER IRF6629TR1PBF MOSFET Transistor, N Channel, 29 A, 25 V, 0.0016 ohm, 10 V, 1.8 V

Obsolete

Continuous Drain Current (ID): 29A

Drain to Source Breakdown Voltage: 25V

Drain to Source Resistance: 2.7mR

Drain to Source Voltage (Vdss): 25V

+25

IRF6623

Power Field-Effect Transistor, 16A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6626

Trans MOSFET N-CH 30V 16A 7-Pin Direct-FET ST

Obsolete

Continuous Drain Current (ID): 72A

Current Rating: 16A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 4mR

IRF6620

Trans MOSFET N-CH 20V 27A 7-Pin Direct-FET MX

Obsolete

Continuous Drain Current (ID): 27A

Current Rating: 27A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 2.1R

+19

IRF6621

Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Obsolete

Continuous Drain Current (ID): 12A

Current Rating: 12A

Fall Time: 4.1ns

Gate to Source Voltage (Vgs): 20V

IRF6622

Trans MOSFET N-CH 25V 15A 6-Pin Direct-FET SQ T/R

Volume Production

Continuous Drain Current (ID): 15A

Fall Time: 5.6ns

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

IRF6626TR1

MOSFET, N, DIRECTFET, ST

Obsolete

Continuous Drain Current (ID): 16A

Drain to Source Breakdown Voltage: 30V

Drain to Source Voltage (Vdss): 30V

Dual Supply Voltage: 30V

+20

Trans MOSFET N-CH 20V 16A 7-Pin Direct-FET ST T/R

Volume Production

Continuous Drain Current (ID): 16A

Current Rating: 16A

Drain to Source Voltage (Vdss): 20V

Drain-source On Resistance-Max: 5.7MR

Power Field-Effect Transistor, 16A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6628TRPBF

Power Field-Effect Transistor, 27A I(D), 25V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2

ROHS COMPLIANT, ISOMETRIC-2

Transferred

Continuous Drain Current (ID): 12A

Current Rating: 12A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 12.1mR

IRF6622TRPBF

Power Field-Effect Transistor, 15A I(D), 25V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3

ROHS COMPLIANT, ISOMETRIC-3

Transferred

Continuous Drain Current (ID): 59A

Current Rating: 15A

Drain to Source Breakdown Voltage: 25V

Drain to Source Resistance: 8.9mR

+14

Power Field-Effect Transistor, 27A I(D), 20V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6621TR1

N-Channel MOSFET, 30V, 12A, 9.1mΩ Rds On, SMT

CHIP CARRIER, R-XBCC-N3

Obsolete

Continuous Drain Current (ID): 12A

Current Rating: 12A

Drain to Source Breakdown Voltage: 30V

Drain to Source Voltage (Vdss): 30V

+23

IRF6626TRPBF

30V N-Channel MOSFET, 16A, 5.4mR Rds(on), DirectFET ST

Obsolete

Continuous Drain Current (ID): 16A

Current Rating: 16A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 7.1mR

+24

Power Field-Effect Transistor, 27A I(D), 20V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3

ROHS COMPLIANT, ISOMETRIC-3

Transferred

Continuous Drain Current (ID): 150A

Current Rating: 27A

Gate to Source Voltage (Vgs): 20V

Height: 0.506mm

+13

IRF6620TR1

INTERNATIONAL RECTIFIER IRF6620TR1 MOSFET, N, DIRECTFET, MX

Obsolete

Continuous Drain Current (ID): 27A

Drain to Source Breakdown Voltage: 20V

Drain to Source Voltage (Vdss): 20V

Dual Supply Voltage: 20V

+22

IRF6623TR1

N-Channel MOSFET, 20V, 16A, 5.7mR Rds On, Surface Mount

CHIP CARRIER, R-XBCC-N3

Obsolete

Continuous Drain Current (ID): 16A

Drain to Source Breakdown Voltage: 20V

Drain to Source Voltage (Vdss): 20V

Dual Supply Voltage: 20V

+21

IRF6622TR1

Trans MOSFET N-CH 25V 15A 6-Pin Direct-FET SQ T/R

Volume Production

Continuous Drain Current (ID): 15A

Fall Time: 5.6ns

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2