Search Results for &quot; IRFF9210 &quot;

Trans MOSFET P-CH 200V 1.6A 3-Pin TO-39

Volume Production

Continuous Drain Current (ID): 1.6A

Drain to Source Breakdown Voltage: -200V

Drain to Source Resistance: 3mR

Drain to Source Voltage (Vdss): -200V

Power Field-Effect Transistor, 1.5A I(D), 200V, 3.45ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

TO-39, 3 PIN

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

JEDEC Package Code: TO-205AF

Power Field-Effect Transistor, 1.5A I(D), 200V, 3.45ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN

CYLINDRICAL, O-MBCY-W3

Active

Number of Terminals: 3

Terminal Position: BOTTOM

JEDEC Package Code: TO-205AF

Number of Elements: 1

P CH MOSFET, -100V, 4A, TO-205AF

Volume Production

Package/Case: TO-205AF

Continuous Drain Current (ID): 4A

Drain to Source Breakdown Voltage: -100V

Drain to Source Voltage (Vdss): -100V

Trans MOSFET P-CH 200V 2.5A 3-Pin TO-39

Volume Production

Package/Case: TO-39

Continuous Drain Current (ID): 2.5A

Drain to Source Breakdown Voltage: -200V

Drain to Source Resistance: 1.5R

Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

CYLINDRICAL, O-MBCY-W3

Transferred

Package/Case: TO-39

Continuous Drain Current (ID): 4A

Drain to Source Breakdown Voltage: -200V

Drain to Source Resistance: 800mR

4A, 100V, 0.69ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN

CYLINDRICAL, O-MBCY-W3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

JEDEC Package Code: TO-205AF

2.5A, 200V, 1.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN

CYLINDRICAL, O-MBCY-W3

Active

Number of Terminals: 3

Terminal Position: BOTTOM

JEDEC Package Code: TO-205AF

Pin Count: 2

2.5A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN

CYLINDRICAL, O-MBCY-W3

Active

Number of Terminals: 3

Terminal Position: BOTTOM

JEDEC Package Code: TO-205AF

Pin Count: 2

MOSFET N-Channel 100V 2.5A 10.2R Through Hole

CYLINDRICAL, O-MBCY-W3

Transferred

Continuous Drain Current (ID): 2.5A

Drain to Source Breakdown Voltage: -100V

Drain to Source Resistance: 1.2R

Drain to Source Voltage (Vdss): -100V

Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

TO-39, 3 PIN

Active

Max Operating Temperature: 150

Number of Terminals: 3

Min Operating Temperature: -55

Terminal Position: BOTTOM

Power Field-Effect Transistor, 2.5A I(D), 100V, 1.38ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

TO-39, 3 PIN

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

JEDEC Package Code: TO-205AF

Harris

Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,

CYLINDRICAL, O-MBCY-W3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

JEDEC Package Code: TO-205AF

Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

TO-39, 3 PIN

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

JEDEC Package Code: TO-205AF

Power Field-Effect Transistor, 2.5A I(D), 200V, 1.725ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

TO-39, 3 PIN

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

JEDEC Package Code: TO-205AF

Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN

CYLINDRICAL, O-MBCY-W3

Active

Number of Terminals: 3

Terminal Position: BOTTOM

JEDEC Package Code: TO-205AF

Number of Elements: 1

Intersil

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

Volume Production

RoHS Compliant: No

Rochester Electronics

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

Unknown

Continuous Drain Current (ID): -4A

Drain to Source Breakdown Voltage: -100V

Drain to Source Resistance: 600mR

Drain to Source Voltage (Vdss): -100V

Rochester Electronics

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

Unknown

Continuous Drain Current (ID): -2.5A

Drain to Source Breakdown Voltage: -200V

Drain to Source Resistance: 1.5R

Drain to Source Voltage (Vdss): -200V

New Jersey Semiconductor

Trans MOSFET P-CH 100V 4A 3-Pin TO-39

Contact Manufacturer

Search Results for "IRFF9210"

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Trans MOSFET P-CH 200V 1.6A 3-Pin TO-39

Volume Production

Continuous Drain Current (ID): 1.6A

Drain to Source Breakdown Voltage: -200V

Drain to Source Resistance: 3mR

Drain to Source Voltage (Vdss): -200V

Power Field-Effect Transistor, 1.5A I(D), 200V, 3.45ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

TO-39, 3 PIN

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

JEDEC Package Code: TO-205AF

Power Field-Effect Transistor, 1.5A I(D), 200V, 3.45ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN

CYLINDRICAL, O-MBCY-W3

Active

Number of Terminals: 3

Terminal Position: BOTTOM

JEDEC Package Code: TO-205AF

Number of Elements: 1

P CH MOSFET, -100V, 4A, TO-205AF

Volume Production

Package/Case: TO-205AF

Continuous Drain Current (ID): 4A

Drain to Source Breakdown Voltage: -100V

Drain to Source Voltage (Vdss): -100V

Trans MOSFET P-CH 200V 2.5A 3-Pin TO-39

Volume Production

Package/Case: TO-39

Continuous Drain Current (ID): 2.5A

Drain to Source Breakdown Voltage: -200V

Drain to Source Resistance: 1.5R

Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

CYLINDRICAL, O-MBCY-W3

Transferred

Package/Case: TO-39

Continuous Drain Current (ID): 4A

Drain to Source Breakdown Voltage: -200V

Drain to Source Resistance: 800mR

4A, 100V, 0.69ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN

CYLINDRICAL, O-MBCY-W3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

JEDEC Package Code: TO-205AF

2.5A, 200V, 1.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN

CYLINDRICAL, O-MBCY-W3

Active

Number of Terminals: 3

Terminal Position: BOTTOM

JEDEC Package Code: TO-205AF

Pin Count: 2

2.5A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN

CYLINDRICAL, O-MBCY-W3

Active

Number of Terminals: 3

Terminal Position: BOTTOM

JEDEC Package Code: TO-205AF

Pin Count: 2

MOSFET N-Channel 100V 2.5A 10.2R Through Hole

CYLINDRICAL, O-MBCY-W3

Transferred

Continuous Drain Current (ID): 2.5A

Drain to Source Breakdown Voltage: -100V

Drain to Source Resistance: 1.2R

Drain to Source Voltage (Vdss): -100V

Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

TO-39, 3 PIN

Active

Max Operating Temperature: 150

Number of Terminals: 3

Min Operating Temperature: -55

Terminal Position: BOTTOM

Power Field-Effect Transistor, 2.5A I(D), 100V, 1.38ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

TO-39, 3 PIN

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

JEDEC Package Code: TO-205AF

Harris

Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,

CYLINDRICAL, O-MBCY-W3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

JEDEC Package Code: TO-205AF

Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

TO-39, 3 PIN

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

JEDEC Package Code: TO-205AF

Power Field-Effect Transistor, 2.5A I(D), 200V, 1.725ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

TO-39, 3 PIN

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

JEDEC Package Code: TO-205AF

Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN

CYLINDRICAL, O-MBCY-W3

Active

Number of Terminals: 3

Terminal Position: BOTTOM

JEDEC Package Code: TO-205AF

Number of Elements: 1

Intersil

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line