Search Results for "APT60GA60JD60"

Trans IGBT Chip N-CH 600V 112A 4-Pin SOT-227

Insulated Gate Bipolar Transistor, 100A I(C), 300V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN

IGBT 600V 93A 378W SOT227

Insulated Gate Bipolar Transistor, 93A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, ISOTOP-4

Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247

IGBT 600V 93A 378W SOT227

Insulated Gate Bipolar Transistor, 105A I(C), 600V V(BR)CES, N-Channel, ISOTOP-4

Rectifier Diode, 1 Phase, 1 Element, 60A, 600V V(RRM), Silicon, D3PAK-2

Power Field-Effect Transistor, 17A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD

Rectifier Diode, 1 Phase, 1 Element, 60A, 600V V(RRM), Silicon, TO-247, TO-247, 2 PIN

Power Field-Effect Transistor, 38A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4

200V 60A Switching Diode, D3PAK, TO-268

Rectifier Diode, 1 Phase, 1 Element, 60A, 200V V(RRM), Silicon, TO-247, TO-247, 2 PIN

Rectifier Diode, 1 Phase, 1 Element, 60A, 200V V(RRM), Silicon, TO-247, TO-247, 2 PIN

Diode Switching 400V 60A 3-Pin(3+Tab) TO-247

Power Field-Effect Transistor, 39A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4

Power Field-Effect Transistor, 6.5A I(D), 600V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

Power Field-Effect Transistor, 39A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4

75A 200V Schottky Rectifier Diode, TO-247-2