Insulated Gate Bipolar Transistor, 1400A I(C), 1200V V(BR)CES, N-Channel, MODULE-9
Insulated Gate Bipolar Transistor, 1400A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-9
TVS Diode, Unidirectional, 1-Element, Silicon, 8.8V Clamping, 0.4W PD