Power Field-Effect Transistor, 2A I(D), 900V, 7.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 3A I(D), 900V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Trans Voltage Suppressor Diode, 400W, 15.3V V(RWM), Unidirectional, 1 Element, Silicon, DO-213AB,