Automotive Silicon Carbide (SiC) Schottky Diode, 650 V Automotive Silicon Carbide (SiC) Schottky Diode, 650 V, 2500-REEL
Power Field-Effect Transistor, 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IC GATE DRIVER HI SIDE 8-SOIC
Automotive Silicon Carbide (SiC) Schottky Diode, 650 V, 450-TUBE
Automotive Silicon Carbide (SiC) Schottky Diode, 650 V Automotive Silicon Carbide (SiC) Schottky Diode, 650 V, 800-REEL
80A, 1000V Ultrafast Rectifier, TO-247 2L, 450-TUBE
625V, 4A, SOIC-8, High-Side Gate Drive IC, SO 8L NB, 2500-REEL
Power Field-Effect Transistor, 2.1A I(D), 500V, 4.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3
600V 20A N-CH Power MOSFET D2PAK SMT
600V 8A Switching Rectifier Diode, DPAK, 3-Pin SMT
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-252AA, ROHS COMPLIANT, DPAK-3
IGBT, 400V, 26A, 1.35V, 300mJ, TO-220 EcoSPARK® II, N-Channel Ignition, TO-220 3L, 400-TUBE
IGBT, 400V, 25A, 1.30V, 335mJ, TO-220 EcoSPARK® II, N-Channel Ignition, TO-220 3L, 400-TUBE
400V, 25A, 1.30V, 335mJ, TO-220 EcoSPARK® II, N-Channel Ignition IGBT, TO-220 3L, 800-RAIL
400V, 26A, 1.35V, 300mJ, TO-220 EcoSPARK® II, N-Channel Ignition IGBT, TO-220 3L, 800-RAIL
IC GATE DRIVER HALF BRIDGE 8SOIC
N-Channel MOSFET 600V, 47A, 75mΩ, TO-247 3L, 450-TUBE
Trans IGBT Chip N-CH 390V 25.6A 150000mW Automotive 3-Pin(2+Tab) DPAK T/R
