Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
International Rectifier IRF634, MOSFET IRF 634 N channel TO 220 8.1A 250V

Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3