Search Results for &quot; IRF640SPBF &quot;

Trans MOSFET N-CH 20V 150A 7-Pin Direct-FET MT

Obsolete

Continuous Drain Current (ID): 150A

Current Rating: 31A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 1.6R

+18

IRF6646

Trans MOSFET N-CH 80V 12A 7-Pin Direct-FET MN

Obsolete

Continuous Drain Current (ID): 12A

Current Rating: 12A

Drain to Source Breakdown Voltage: 80V

Fall Time: 12ns

+14

IRF6216

Small Signal Field-Effect Transistor, 2.2A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8

SOP-8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 2.2A

Drain to Source Breakdown Voltage: -150V

Max Operating Temperature: 150°C

IRF630L

MOSFET N-CH 200V 9A TO-262

Not Recommended for New Design

Package/Case: TO-262-3

Continuous Drain Current (ID): 9A

Drain to Source Voltage (Vdss): 200V

Input Capacitance: 800pF

IRF610B

Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, TO-220, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220

IRF610A

Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF6636

Power Field-Effect Transistor, 18A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

ISOMETRIC-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6645

Power Field-Effect Transistor, 5.7A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

ISOMETRIC-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF624S

N-Channel MOSFET, 250V, 4.4A, 1.1Ω, D2PAK

SMALL OUTLINE, R-PSSO-G2

Obsolete

Package/Case: D2PAK

Continuous Drain Current (ID): 4.4A

Current Rating: 4.4A

Drain to Source Resistance: 400mR

+23

IRF6620

Trans MOSFET N-CH 20V 27A 7-Pin Direct-FET MX

Obsolete

Continuous Drain Current (ID): 27A

Current Rating: 27A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 2.1R

+19

IRF6648

International Rectifier IRF6648 N-channel MOSFET Transistor, 86 A, 60 V, 7-pin DirectFET MN

Obsolete

Continuous Drain Current (ID): 86A

Drain to Source Breakdown Voltage: 60V

Drain to Source Voltage (Vdss): 60V

Drain-source On Resistance-Max: 7MR

+17

IRF6668

International Rectifier IRF6668 N-channel MOSFET Transistor, 55 A, 80 V, 7-pin DirectFET MZ

Volume Production

Continuous Drain Current (ID): 55A

Fall Time: 23ns

Gate to Source Voltage (Vgs): 20V

Height: 0.6mm

IRF6621

Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Obsolete

Continuous Drain Current (ID): 12A

Current Rating: 12A

Fall Time: 4.1ns

Gate to Source Voltage (Vgs): 20V

+10

IRF6100

Small Signal Field-Effect Transistor, 5.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, FLIPFET, ISOMETRIC-4

GRID ARRAY, S-PBGA-B4

Obsolete

Continuous Drain Current (ID): 5.1A

Current Rating: -5.1A

Drain to Source Voltage (Vdss): 20V

Input Capacitance: 1.23nF

IRF6622

Trans MOSFET N-CH 25V 15A 6-Pin Direct-FET SQ T/R

Volume Production

Continuous Drain Current (ID): 15A

Fall Time: 5.6ns

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

IRF610R

Harris

Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF6218

Power Field-Effect Transistor, 27A I(D), 150V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

FLANGE MOUNT, R-PSFM-T3

Transferred

Package/Case: TO-220AB

Continuous Drain Current (ID): 27A

Drain to Source Voltage (Vdss): 150V

RoHS Compliant: No

Power Field-Effect Transistor, 30A I(D), 20V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3

ROHS COMPLIANT, ISOMETRIC-3

Obsolete

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6215

Power Field-Effect Transistor, 11A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

FLANGE MOUNT, R-PSFM-T3

Transferred

RoHS Compliant: No

Power Field-Effect Transistor, 30A I(D), 20V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MX, ISOMETRIC-2

SMALL OUTLINE, R-XDSO-G2

Obsolete

Continuous Drain Current (ID): 30A

Current Rating: 30A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 1.65R

Search Results for "IRF640SPBF"

Filters

IRF6609

Trans MOSFET N-CH 20V 150A 7-Pin Direct-FET MT

Obsolete

Continuous Drain Current (ID): 150A

Current Rating: 31A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 1.6R

+18

IRF6646

Trans MOSFET N-CH 80V 12A 7-Pin Direct-FET MN

Obsolete

Continuous Drain Current (ID): 12A

Current Rating: 12A

Drain to Source Breakdown Voltage: 80V

Fall Time: 12ns

+14

IRF6216

Small Signal Field-Effect Transistor, 2.2A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8

SOP-8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 2.2A

Drain to Source Breakdown Voltage: -150V

Max Operating Temperature: 150°C

IRF630L

MOSFET N-CH 200V 9A TO-262

Not Recommended for New Design

Package/Case: TO-262-3

Continuous Drain Current (ID): 9A

Drain to Source Voltage (Vdss): 200V

Input Capacitance: 800pF

IRF610B

Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, TO-220, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220

IRF610A

Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF6636

Power Field-Effect Transistor, 18A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

ISOMETRIC-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6645

Power Field-Effect Transistor, 5.7A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

ISOMETRIC-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF624S

N-Channel MOSFET, 250V, 4.4A, 1.1Ω, D2PAK

SMALL OUTLINE, R-PSSO-G2

Obsolete

Package/Case: D2PAK

Continuous Drain Current (ID): 4.4A

Current Rating: 4.4A

Drain to Source Resistance: 400mR

+23

IRF6620

Trans MOSFET N-CH 20V 27A 7-Pin Direct-FET MX

Obsolete

Continuous Drain Current (ID): 27A

Current Rating: 27A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 2.1R

+19

IRF6648

International Rectifier IRF6648 N-channel MOSFET Transistor, 86 A, 60 V, 7-pin DirectFET MN

Obsolete

Continuous Drain Current (ID): 86A

Drain to Source Breakdown Voltage: 60V

Drain to Source Voltage (Vdss): 60V

Drain-source On Resistance-Max: 7MR

+17

IRF6668

International Rectifier IRF6668 N-channel MOSFET Transistor, 55 A, 80 V, 7-pin DirectFET MZ

Volume Production

Continuous Drain Current (ID): 55A

Fall Time: 23ns

Gate to Source Voltage (Vgs): 20V

Height: 0.6mm

IRF6621

Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Obsolete

Continuous Drain Current (ID): 12A

Current Rating: 12A

Fall Time: 4.1ns

Gate to Source Voltage (Vgs): 20V

+10

IRF6100

Small Signal Field-Effect Transistor, 5.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, FLIPFET, ISOMETRIC-4

GRID ARRAY, S-PBGA-B4

Obsolete

Continuous Drain Current (ID): 5.1A

Current Rating: -5.1A

Drain to Source Voltage (Vdss): 20V

Input Capacitance: 1.23nF

IRF6622

Trans MOSFET N-CH 25V 15A 6-Pin Direct-FET SQ T/R

Volume Production

Continuous Drain Current (ID): 15A

Fall Time: 5.6ns

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

IRF610R

Harris

Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FLANGE MOUNT, R-PSFM-T3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

IRF6218

Power Field-Effect Transistor, 27A I(D), 150V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

FLANGE MOUNT, R-PSFM-T3

Transferred

Package/Case: TO-220AB

Continuous Drain Current (ID): 27A

Drain to Source Voltage (Vdss): 150V

RoHS Compliant: No

Power Field-Effect Transistor, 30A I(D), 20V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3

ROHS COMPLIANT, ISOMETRIC-3

Obsolete

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRF6215

Power Field-Effect Transistor, 11A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

FLANGE MOUNT, R-PSFM-T3

Transferred

RoHS Compliant: No

Power Field-Effect Transistor, 30A I(D), 20V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MX, ISOMETRIC-2

SMALL OUTLINE, R-XDSO-G2

Obsolete

Continuous Drain Current (ID): 30A

Current Rating: 30A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 1.65R