Small Signal Field-Effect Transistor, 8.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8

Small Signal Field-Effect Transistor, 2-Element, Silicon, MS-012AA, SOP-8
Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

Power Field-Effect Transistor, 8.7A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Power Field-Effect Transistor, 1.2A I(D), 200V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
DUAL P CHANNEL MOSFET, -30V, MICRO8; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-1.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):270mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1V ;RoHS Compliant: No
Power Field-Effect Transistor, 2.5A I(D), 20V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET