DUAL P CHANNEL MOSFET, -30V, MICRO8; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-1.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):270mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1V ;RoHS Compliant: No
Power Field-Effect Transistor, 2.5A I(D), 20V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 5.8A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
Power Field-Effect Transistor, 4.3A I(D), 20V, 0.055ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8
Power Field-Effect Transistor, 2.4A I(D), 30V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8

Power Field-Effect Transistor, 6.2A I(D), 30V, 0.038ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
Power Field-Effect Transistor, 2.3A I(D), 20V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8