Power Field-Effect Transistor, 3.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8
Power Field-Effect Transistor, 5.6A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8

Power Field-Effect Transistor, 4.1A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2
DUAL P CHANNEL MOSFET, -30V, MICRO8; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-1.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):270mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1V ;RoHS Compliant: No
Power Field-Effect Transistor, 3A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET